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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 681. | 2N5086 | Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. | USHA | - | 3 | 0°C | 150°C | 76K |
| 682. | 2N5087 | Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. | USHA | - | 3 | 0°C | 150°C | 76K |
| 683. | 2N5088 | Amplifier transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 35V. Collector dissipation: Pc(max) = 625mW. | USHA | - | 3 | 0°C | 150°C | 45K |
| 684. | 2N5089 | Amplifier transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. | USHA | - | 3 | 0°C | 150°C | 80K |
| 685. | BU508A | NPN, horizontal deflection transistor. Designed for use in large screen color deflection circuits. Vceo = 700Vdc, Vces = 1500Vdc, Veb = 5Vdc, Ic = 8Adc, PD = 125W. | USHA | TO-218 | 3 | -65°C | 150°C | 48K |
| 686. | BU508D | NPN silicon power transistor. Horizontal deflection output stages of large screen colour deflection circuits. 8Amp, 1500V, 125Watt. | USHA | TO-218AC | 3 | -65°C | 150°C | 48K |
| 687. | BU508D | NPN, horizontal deflection transistor. Designed for use in large screen color deflection circuits. Vceo = 700Vdc, Vces = 1500Vdc, Veb = 5Vdc, Ic = 8Adc, PD = 125W. | USHA | TO-218 | 3 | -65°C | 150°C | 48K |
| 688. | DF1508M | 800V, 1.5A glass passivated bridge rectifier | LITON | DF | 4 | -55°C | 150°C | 36K |
| 689. | DF1508S | 800V, 1.5A surface mount glass passivated bridge rectifier | LITON | DF-S | 4 | -55°C | 150°C | 36K |
| 690. | GBPC1508G | 800V, 15A glass passivated bridge rectifier | LITON | - | 4 | -55°C | 150°C | 39K |
| 691. | GBPC1508GW | 800V, 15A glass passivated bridge rectifier | LITON | - | 4 | -55°C | 150°C | 39K |
| 692. | GBPC1508W | 800V, 15A glass passivated bridge rectifier | LITON | - | 4 | -55°C | 150°C | 40K |
| 693. | GBPC1508W | High current silicon bridge rectifier. Max recurrent peak reverse voltage 800 V. Max average forward current for resistive load at Tc=55degC 15 A. | PAJIT | GBPC-W | 4 | -50°C | 150°C | 42K |
| 694. | GBPC1508W | High current silicon bridge rectifier. Max recurrent peak reverse voltage 800 V. Max average forward current for resistive load at Tc=55degC 15 A. | PAJIT | GBPC-W | 4 | -50°C | 150°C | 42K |
| 695. | GBPC2508W | 800V, 25A glass passivated bridge rectifier | LITON | - | 4 | -55°C | 150°C | 40K |
| 696. | GBPC2508W | High current silicon bridge rectifier. Max recurrent peak reverse voltage 800 V. Max average forward current for resistive load at Tc=55degC 25 A. | PAJIT | GBPC-W | 4 | -50°C | 150°C | 40K |
| 697. | GBPC3508W | 800V, 35A glass passivated bridge rectifier | LITON | - | 4 | -55°C | 150°C | 40K |
| 698. | GBPC3508W | High current silicon bridge rectifier. Max recurrent peak reverse voltage 800 V. Max average forward current for resistive load at Tc=55degC 35 A. | PAJIT | GBPC-W | 4 | -50°C | 150°C | 40K |
| 699. | KBPC2508GW | 800V, 25A glass passivated bridge rectifier | LITON | - | 4 | -55°C | 150°C | 39K |
| 700. | RBV2508D | 800 V, 25 A, silicon bridge rectifier | EIC | RBV25 | 4 | -40°C | 150°C | 19K |
