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Found: 318      Displaying: 301 - 318
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
301.
B-3034SR-CALight bar super red
PARA
-
10
-
-
77K
302.
B-3514SR-CALight bar super red
PARA
-
4
-
-
77K
303.
HA17384SRPHigh speed current mode PWM control IC for switching power supply
HIT
SOP
8
-20°C
105°C
146K
304.
L-204SRD1.8 mm dia tower type LED lamp, super red
PARA
-
2
-
-
122K
305.
L-214SRD1.8 mm dia tower type LED lamp, super red
PARA
-
2
-
-
122K
306.
L-304SRD3.0 mm dia flangeless LED lamp, super red
PARA
-
2
-
-
108K
307.
L-314SRC3.0 mm dia LED lamp, super red
PARA
-
2
-
-
65K
308.
L-314SRD3.0 mm dia LED lamp, super red
PARA
-
2
-
-
65K
309.
L-314SRT3.0 mm dia LED lamp, super red
PARA
-
2
-
-
65K
310.
L-334SRD3.0 mm dia flangeless LED lamp, super red
PARA
-
2
-
-
108K
311.
L-3N4SRD3.0 mm dia low frofile LED lamp,super red
PARA
-
2
-
-
103K
312.
L-4H4SRDSuper red, 2.0 x 5.0 x 9.6 mm rectangular LED lamp
PARA
-
2
-
-
108K
313.
REC2.2-1224SRW2.2W DC/DC converter with 9-18V input, 24V/92mA output
RECOM
DIP
24
-40°C
85°C
86K
314.
REC2.2-2424SRW2.2W DC/DC converter with 18-36V input, 24V/92mA output
RECOM
DIP
24
-40°C
85°C
86K
315.
REC2.2-2424SRW2.2W DC/DC converter with 18-36V input, 24V/92mA output
RECOM
DIP
24
-40°C
85°C
86K
316.
REC2.2-4824SRW2.2W DC/DC converter with 36-72V input, 24V/92mA output
RECOM
DIP
24
-40°C
85°C
86K
317.
W4SRD0R-0D00Diameter: 50.8mm; semi-insulating; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
CREE
-
-
-
-
279K
318.
W4SRD8R-0D00Diameter: 50.8mm; semi-insulating; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
CREE
-
-
-
-
279K
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