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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 61. | GNR34S511K | Varistor. Max allowable voltage: ACrms=320V, DC=415V. Varistor voltage 459-561V. | CRMT | - | 2 | -40°C | 85°C | 68K |
| 62. | GNR34S561K | Varistor. Max allowable voltage: ACrms=350V, DC=460V. Varistor voltage 504-616V. | CRMT | - | 2 | -40°C | 85°C | 68K |
| 63. | K4S560432A-TC/L1H | 16M x 4bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 100 MHz (CL=2), interface LVTTL. | SMSNG | TSOP (II) | 54 | 0°C | 70°C | 127K |
| 64. | K4S560432A-TC/L1L | 16M x 4bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 100 MHz (CL=3), interface LVTTL. | SMSNG | TSOP (II) | 54 | 0°C | 70°C | 127K |
| 65. | K4S560432A-TC/L75 | 16M x 4bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 133 MHz (CL=3), interface LVTTL. | SMSNG | TSOP (II) | 54 | 0°C | 70°C | 127K |
| 66. | K4S560432A-TC/L80 | 16M x 4bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 125 MHz (CL=3), interface LVTTL. | SMSNG | TSOP (II) | 54 | 0°C | 70°C | 127K |
| 67. | K4S560432B-TC/L1H | 16M x 4bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 100 MHz (CL=2), interface LVTTL. | SMSNG | TSOP (II) | 54 | 0°C | 70°C | 130K |
| 68. | K4S560432B-TC/L1L | 16M x 4bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 100 MHz (CL=3), interface LVTTL. | SMSNG | TSOP (II) | 54 | 0°C | 70°C | 130K |
| 69. | K4S560432B-TC/L75 | 16M x 4bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 133 MHz (CL=3), interface LVTTL. | SMSNG | TSOP (II) | 54 | 0°C | 70°C | 130K |
| 70. | K4S560832B-TC/L1H | 8M x 8bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 100 MHz (CL=2), interface LVTTL. | SMSNG | TSOP (II) | 54 | 0°C | 70°C | 131K |
| 71. | K4S560832B-TC/L1L | 8M x 8bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 100 MHz (CL=3), interface LVTTL. | SMSNG | TSOP (II) | 54 | 0°C | 70°C | 131K |
| 72. | K4S560832B-TC/L75 | 8M x 8bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 133 MHz (CL=3), interface LVTTL. | SMSNG | TSOP (II) | 54 | 0°C | 70°C | 131K |
| 73. | K4S560832C-TC/L1H | 8M x 8bit x 4 banks synchronous DRAM LVTTL, 100MHz | SMSNG | TSOP | 54 | 0°C | 70°C | 113K |
| 74. | K4S560832C-TC/L1L | 8M x 8bit x 4 banks synchronous DRAM LVTTL, 100MHz | SMSNG | TSOP | 54 | 0°C | 70°C | 113K |
| 75. | K4S560832C-TC/L75 | 8M x 8bit x 4 banks synchronous DRAM LVTTL, 133MHz | SMSNG | TSOP | 54 | 0°C | 70°C | 113K |
| 76. | K4S560832C-TC/L7C | 8M x 8bit x 4 banks synchronous DRAM LVTTL, 133MHz | SMSNG | TSOP | 54 | 0°C | 70°C | 113K |
| 77. | K4S560832D-TC/L75 | 8M x 8bit x 4 banks synchronous DRAM LVTTL, 133MHz | SMSNG | TSOP II | 54 | 0°C | 70°C | 118K |
| 78. | MDE-34S511K | 510V; max peak current:40000A; Tmax=12; metal oxide varistor. High energy series 34mm single square | MDE | - | 2 | - | - | 88K |
| 79. | MDE-34S561K | 560V; max peak current:40000A; Tmax=12; metal oxide varistor. High energy series 34mm single square | MDE | - | 2 | - | - | 88K |
| 80. | SMS24S5R1R1R0R0 | Highly programmable voltage supervisory circuit | SUMIT | SOIC | 8 | -40°C | 85°C | 446K |
