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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 21. | 28LV64JC-3 | Speed: 200 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | PLCC | 32 | 0°C | 70°C | 42K |
| 22. | 28LV64JC-3 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. | TURBO | PLCC | 32 | 0°C | 70°C | 42K |
| 23. | 28LV64JC-4 | Speed: 250 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | PLCC | 32 | 0°C | 70°C | 42K |
| 24. | 28LV64JC-4 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. | TURBO | PLCC | 32 | 0°C | 70°C | 42K |
| 25. | 28LV64JC-5 | Speed: 300 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | PLCC | 32 | 0°C | 70°C | 42K |
| 26. | 28LV64JC-5 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns. | TURBO | PLCC | 32 | 0°C | 70°C | 42K |
| 27. | 28LV64JC-6 | Speed: 400 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | PLCC | 32 | 0°C | 70°C | 42K |
| 28. | 28LV64JC-6 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns. | TURBO | PLCC | 32 | 0°C | 70°C | 42K |
| 29. | AD744JCHIPS | +-18V; 500mW; precision, 500ns seeling BiFET Op Amp. For output buffers for 12-bit, 14-bit and 16-bit DACs, ADC buffers, cable drivers, wideband; preampifiers and active filters | AD | Die | - | 0°C | 70°C | 478K |
| 30. | UT51C164JC-60 | Access time: 60 ns, 256 K x 16 Bit EDO DRAM | UTRON | SOJ | 40 | 0°C | 70°C | 277K |
| 31. | UT51L164JC-35 | Access time: 35 ns, 256 K x 16 Bit EDO DRAM | UTRON | SOJ | 40 | 0°C | 70°C | 404K |
| 32. | UT51L164JC-40 | Access time: 40 ns, 256 K x 16 Bit EDO DRAM | UTRON | SOJ | 40 | 0°C | 70°C | 404K |
| 33. | UT51L164JC-50 | Access time: 50 ns, 256 K x 16 Bit EDO DRAM | UTRON | SOJ | 40 | 0°C | 70°C | 404K |
| 34. | UT51L164JC-60 | Access time: 60 ns, 256 K x 16 Bit EDO DRAM | UTRON | SOJ | 40 | 0°C | 70°C | 404K |
| 35. | UT611024JC-10 | Access time: 10 ns, 128 K x 8 Bit high speed CMOS SRAM | UTRON | SOJ | 32 | 0°C | 70°C | 138K |
| 36. | UT611024JC-12 | Access time: 12 ns, 128 K x 8 Bit high speed CMOS SRAM | UTRON | SOJ | 32 | 0°C | 70°C | 138K |
| 37. | UT611024JC-15 | Access time: 15 ns, 128 K x 8 Bit high speed CMOS SRAM | UTRON | SOJ | 32 | 0°C | 70°C | 138K |
| 38. | UT61L1024JC-12 | Access time: 12 ns, 128 K x 8 Bit high speed CMOS SRAM | UTRON | SOJ | 32 | 0°C | 70°C | 204K |
| 39. | UT61L1024JC-15 | Access time: 15 ns, 128 K x 8 Bit high speed CMOS SRAM | UTRON | SOJ | 32 | 0°C | 70°C | 204K |
| 40. | VI-24JCX | InputV:72V; outputV:36V; 50-200W; 10-40A; DC-DC converter | VICOR | - | 9 | -25°C | 85°C | 37K |
