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Found: 619      Displaying: 521 - 540
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
521.
IRG4BC15UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8A
IRF
-
3
-55°C
150°C
255K
522.
IRG4BC15UD-LInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8A
IRF
TO-262
3
-55°C
150°C
210K
523.
IRG4BC15UD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8A
IRF
DDPak
3
-55°C
150°C
210K
524.
IRG4BC15UD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8A
IRF
DDPak
3
-55°C
150°C
210K
525.
IRG4BC20Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0A
IRF
-
3
-55°C
150°C
161K
526.
IRG4BC20FDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0A
IRF
-
3
-55°C
150°C
222K
527.
IRG4BC20FD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0A
IRF
DDPak
3
-55°C
150°C
222K
528.
IRG4BC20KInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0A
IRF
-
3
-55°C
150°C
138K
529.
IRG4BC20K-SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0A
IRF
DDPak
3
-55°C
150°C
162K
530.
IRG4BC20KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0A
IRF
-
3
-55°C
150°C
199K
531.
IRG4BC20KD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0A
IRF
DDPak
3
-55°C
150°C
222K
532.
IRG4BC20MDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 11A
IRF
-
3
-55°C
150°C
251K
533.
IRG4BC20MD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 11A
IRF
DDPak
3
-55°C
150°C
200K
534.
IRG4BC20SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A
IRF
-
3
-55°C
150°C
157K
535.
IRG4BC20SDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A
IRF
-
3
-55°C
150°C
287K
536.
IRG4BC20SDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A
IRF
-
3
-55°C
150°C
287K
537.
IRG4BC20SD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A
IRF
DDPak
3
-55°C
150°C
382K
538.
IRG4BC20UInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 6.5A
IRF
-
3
-55°C
150°C
167K
539.
IRG4BC20UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 6.5A
IRF
-
3
-55°C
150°C
236K
540.
IRG4BC20W-SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.16V @ VGE = 15V, IC = 6.5A
IRF
DDPak
3
-55°C
150°C
152K
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