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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 501. | AIC1804BCS | Overcharge protection voltage: 4.30V; three- or four-cell lithium-lon battery protection IC | AIC | SOIC | 16 | 0°C | 70°C | 170K |
| 502. | AME1084BCBT | 5A low dropout positive voltage regulator | AME | TO-220 | 3 | 0°C | 125°C | 108K |
| 503. | AME1084BCCS | 5A low dropout positive voltage regulator | AME | TO-252 | 3 | 0°C | 125°C | 108K |
| 504. | AME1084BCDT | 5A low dropout positive voltage regulator | AME | TO-263 | 3 | 0°C | 125°C | 108K |
| 505. | AME1084BCDT-3 | 5A low dropout positive voltage regulator | AME | TO-263 | 3 | 0°C | 125°C | 108K |
| 506. | IRG4BC10K | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A | IRF | - | 3 | -55°C | 150°C | 158K |
| 507. | IRG4BC10KD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A | IRF | - | 3 | -55°C | 150°C | 210K |
| 508. | IRG4BC10S | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A | IRF | - | 3 | -55°C | 150°C | 157K |
| 509. | IRG4BC10SD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A | IRF | - | 3 | -55°C | 150°C | 210K |
| 510. | IRG4BC10SD-L | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A | IRF | TO-262 | 3 | -55°C | 150°C | 217K |
| 511. | IRG4BC10SD-S | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A | IRF | DDPak | 3 | -55°C | 150°C | 217K |
| 512. | IRG4BC10UD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.150V @ VGE = 15V, IC = 5.0A, tf(typ) = 140ns. | IRF | - | 3 | -55°C | 150°C | 184K |
| 513. | IRG4BC15MD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.88V @ VGE = 15V, IC = 8.5A | IRF | - | 3 | -55°C | 150°C | 256K |
| 514. | OR2T26A-4BC432 | ORCA feild-programmable gate array. Voltage 3.3 V. | AGERE | EBGA | 432 | 0°C | 70°C | 3M |
| 515. | OR2T26A-4BC432I | ORCA feild-programmable gate array. Voltage 3.3 V. | AGERE | EBGA | 432 | -40°C | 85°C | 3M |
| 516. | OR2T40A-4BC432 | ORCA feild-programmable gate array. Voltage 3.3 V. | AGERE | EBGA | 432 | 0°C | 70°C | 3M |
| 517. | OR2T40A-4BC432I | ORCA feild-programmable gate array. Voltage 3.3 V. | AGERE | EBGA | 432 | -40°C | 85°C | 3M |
| 518. | OR2T40B-4BC432 | ORCA feild-programmable gate array. Voltage 3.3 V. | AGERE | EBGA | 432 | 0°C | 70°C | 3M |
| 519. | OR2T40B-4BC432I | ORCA feild-programmable gate array. Voltage 3.3 V. | AGERE | EBGA | 432 | -40°C | 85°C | 3M |
| 520. | OR2T40B-4BC432I | ORCA feild-programmable gate array. Voltage 3.3 V. | AGERE | EBGA | 432 | -40°C | 85°C | 3M |
