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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 201. | 28C64APC-1 | High speed 120 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | PDIP | 28 | 0°C | 70°C | 42K |
| 202. | 28C64APC-2 | High speed 150 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | PDIP | 28 | 0°C | 70°C | 42K |
| 203. | 28C64APC-3 | High speed 200 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | PDIP | 28 | 0°C | 70°C | 42K |
| 204. | 28C64APC-4 | High speed 250 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | PDIP | 28 | 0°C | 70°C | 42K |
| 205. | 28C64API-1 | High speed 120 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | PDIP | 28 | -40°C | 85°C | 42K |
| 206. | 28C64API-2 | High speed 150 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | PDIP | 28 | -40°C | 85°C | 42K |
| 207. | 28C64API-3 | High speed 200 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | PDIP | 28 | -40°C | 85°C | 42K |
| 208. | 28C64API-4 | High speed 250 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | PDIP | 28 | -40°C | 85°C | 42K |
| 209. | 28C64APM-1 | High speed 120 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | PDIP | 28 | -55°C | 125°C | 42K |
| 210. | 28C64APM-2 | High speed 150 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | PDIP | 28 | -55°C | 125°C | 42K |
| 211. | 28C64APM-3 | High speed 200 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | PDIP | 28 | -55°C | 125°C | 42K |
| 212. | 28C64APM-4 | High speed 250 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | PDIP | 28 | -55°C | 125°C | 42K |
| 213. | EDS2504APTA-75 | 256M; 133MHz SDRAM | ELPID | DIMM | 168 | - | - | 559K |
| 214. | EDS2504APTA-7A | 256M; 133MHz SDRAM | ELPID | DIMM | 168 | - | - | 559K |
| 215. | MH32DS64APFH-6 | 4294967296-bit synchronous DRAM module | MITS | - | 144 | 0°C | 70°C | 604K |
| 216. | MH32DS64APFH-6L | 4294967296-bit synchronous DRAM module | MITS | - | 144 | 0°C | 70°C | 604K |
| 217. | MH32DS64APFH-7 | 4294967296-bit synchronous DRAM module | MITS | - | 144 | 0°C | 70°C | 604K |
| 218. | MH32DS64APFH-7L | 4294967296-bit synchronous DRAM module | MITS | - | 144 | 0°C | 70°C | 604K |
| 219. | MT434AP-HR | Axial leaded LED lamp. Peak wavelength 635 nm. Lens color water clear. Luminous intensity(mcd) @20mA: 6.6(min), 11.0(typ). | MRKTE | - | 2 | -25°C | 85°C | 65K |
| 220. | MT734AP-UR | Axial leaded LED lamp. Peak wavelength 660 nm. Lens color water clear. Luminous intensity(mcd) @20mA: 37.0(min), 93.0(typ). | MRKTE | - | 2 | -25°C | 85°C | 65K |
