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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.

Found: 1410      Displaying: 1101 - 1120
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1101.
AQV410EHPhotoMOS relay, GU (general use) E-type [1-channel (form B) type]. AC/DC type. I/O isolation: reanforced 5,000 VAC. Output rating: load voltage 350 V, load current 130 mA. Through hole terminal. Tube packing style.
NAIS
-
6
-40°C
85°C
54K
1102.
AQV410EHAPhotoMOS relay, GU (general use) E-type [1-channel (form B) type]. AC/DC type. I/O isolation: reanforced 5,000 VAC. Output rating: load voltage 350 V, load current 130 mA. Surface-mount terminal. Tube packing style.
NAIS
-
6
-40°C
85°C
54K
1103.
AQV410EHAXPhotoMOS relay, GU (general use) E-type [1-channel (form B) type]. AC/DC type. I/O isolation: reanforced 5,000 VAC. Output rating: load voltage 350 V, load current 130 mA. Surface-mount terminal. Tape and reel packing style. Picked from the 1/2/3-pin side
NAIS
-
6
-40°C
85°C
54K
1104.
AQV410EHAZPhotoMOS relay, GU (general use) E-type [1-channel (form B) type]. AC/DC type. I/O isolation: reanforced 5,000 VAC. Output rating: load voltage 350 V, load current 130 mA. Surface-mount terminal. Tape and reel packing style. Picked from the 4/5/6-pin side
NAIS
-
6
-40°C
85°C
54K
1105.
AQV410EHAZPhotoMOS relay, GU (general use) E-type [1-channel (form B) type]. AC/DC type. I/O isolation: reanforced 5,000 VAC. Output rating: load voltage 350 V, load current 130 mA. Surface-mount terminal. Tape and reel packing style. Picked from the 4/5/6-pin side
NAIS
-
6
-40°C
85°C
54K
1106.
KM44C4100CKL-64M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 60ns
SMSNG
SOJ
24
0°C
70°C
340K
1107.
KM44C4100CS-54M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 50ns
SMSNG
TSOP II
24
0°C
70°C
340K
1108.
KM44C4103CK-54M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns
SMSNG
SOJ
28
0°C
70°C
376K
1109.
KM44C4103CK-64M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns
SMSNG
SOJ
28
0°C
70°C
376K
1110.
KM44C4103CKL-54M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns
SMSNG
SOJ
28
0°C
70°C
376K
1111.
KM44C4103CKL-64M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns
SMSNG
SOJ
28
0°C
70°C
376K
1112.
KM44C4103CS-54M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns
SMSNG
TSOP II
28
0°C
70°C
376K
1113.
KM44C4103CS-64M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns
SMSNG
TSOP II
28
0°C
70°C
376K
1114.
KM44C4103CSL-54M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns
SMSNG
TSOP II
28
0°C
70°C
376K
1115.
KM44C4103CSL-64M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns
SMSNG
TSOP II
28
0°C
70°C
376K
1116.
KM44V4100CKL-64M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns
SMSNG
SOJ
24
0°C
70°C
340K
1117.
KM44V4100CS-54M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns
SMSNG
TSOP II
24
0°C
70°C
340K
1118.
KM44V4100CS-64M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns
SMSNG
TSOP II
24
0°C
70°C
340K
1119.
LD4100EEPR4 read/write controller
LDIC
TQFP
100
-
-
511K
1120.
SI4410DY30 V, N-channel enhancement mode field-effect transistor
PHLPS
SOT
8
-55°C
150°C
266K
1121.
SI9410DY30 V, N-channel enhancement mode field-effect transistor
PHLPS
SOT
8
-55°C
150°C
266K
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