We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet.com is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
All Data provided on this web site and the associated web pages is provided as is. It is intended to be for general information only, and is thus provided without any express or implied warranty or guarantee. It is the responsibility of the user or reader to ensure and confirm that this information is accurate and correct with the original publisher of the data sheet.
Most of the data sheets below are in the "pdf" format so it would be adviseable to use Adobe Acrobat Reader.
| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 161. | 1N4003 | Silicon rectifier. Case molded plastic. Maximum recurrent peak reverse voltage 200 V. Maximum average forward rectified current 1.0 A. | BYTES | - | 2 | -65°C | 150°C | 150K |
| 162. | 1N4003 | Silicon rectifier. Case molded plastic. Maximum recurrent peak reverse voltage 200 V. Maximum average forward rectified current 1.0 A. | BYTES | - | 2 | -65°C | 150°C | 150K |
| 163. | 1N4003 | General purpose plastic rectifier. Max recurrent peak reverse voltage 200 V. Max average forward rectified current 1.0 A. | CNEL | - | 2 | -50°C | 175°C | 153K |
| 164. | 1N4003 | 200 V, 1 A general diode | LRC | - | 2 | - | - | 48K |
| 165. | 1N4003 | 200 V, 1 A general diode | LRC | - | 2 | - | - | 48K |
| 166. | 1N4003 | 200 V, 1 A, plastic silicon rectifier | TRSYS | DO | 2 | -55°C | 150°C | 147K |
| 167. | 1N4003E | 200 V, 1 A general diode | LRC | A-405 | 2 | - | - | 48K |
| 168. | 1N4003G | Glass passivated rectifier. Maximum recurrent peak reverse voltage 200 V. Maximum average forward rectified current 1.0 A. | BYTES | - | 2 | -65°C | 175°C | 151K |
| 169. | 1N4003G | Glass passivated junction plastic rectifier. Max recurrent peak reverse voltage 200 V. Max average forward rectified current 1.0 A. | CNEL | - | 2 | -65°C | 175°C | 140K |
| 170. | 1N4003G | 200 V, 1 A glass passivated rectifier | FORMO | - | 2 | -65°C | 175°C | 32K |
| 171. | 1N4003G | 200 V, 1 A, general purpose GPP diode | LRC | - | 2 | - | - | 51K |
| 172. | 1N4003G | Glass passivated junction rectifier. Max repetitive peak reverse voltage 200 V. Max average forward rectified current 1.0 A. | SSE | - | 2 | -65°C | 150°C | 13K |
| 173. | 1N4003S | Silicon rectifier. Case molded plastic. Maximum recurrent peak reverse voltage 200 V. Maximum average forward rectified current 1.0 A. | BYTES | A-405 | 2 | -65°C | 150°C | 150K |
| 174. | 1N4003S | 200 V, 1 A, plastic silicon rectifier | TRSYS | A-405 | 2 | -55°C | 150°C | 148K |
| 175. | FM4003-M | 200 V, chip silicon rectifier | FORMO | SOD | 2 | -55°C | 150°C | 67K |
| 176. | SM4003 | Surface mount silicon rectifier. Maximum recurrent peak reverse voltage 200 V. Maximum average forward rectified current 1.0 A. | BYTES | SM-1 | - | -65°C | 175°C | 149K |
| 177. | SM4003 | Surface mount glass passivated junction rectifier. Max recarrent peak reverse voltage 200 V. Max average forward rectified current 1.0 A. | CNEL | DO-214AB | 2 | -65°C | 175°C | 142K |
| 178. | SM4003 | 200 V, MELF silicon rectifier | FORMO | SM | 2 | -55°C | 175°C | 65K |
| 179. | SM4003A | Surface mount silicon rectifier. Maximum recurrent peak reverse voltage 200 V. Maximum average forward rectified current 1.0 A. | BYTES | DO-214AC | - | -65°C | 175°C | 154K |
| 180. | UF4003 | 200 V, super fast diode | LRC | - | 2 | - | - | 74K |
