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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 101. | A29040-70 | 70ns 20mA 1uA 512K x 8bit CMOS 5.0V-only | AMIC | DIP | 32 | 0°C | 70°C | 292K |
| 102. | A29040-70 | 70ns 20mA 512K x 8 bit CMOS 5.0volt-only uniform sector flash memory | AMICC | DIP | 32 | 0°C | 70°C | 288K |
| 103. | BTA40-700A | Standard triac, 40Ampere, 700V | STM | RD-91 | 3 | -40°C | 125°C | 65K |
| 104. | BTA40-700B | Standard triac, 40Ampere, 700V | STM | RD-91 | 3 | -40°C | 125°C | 65K |
| 105. | EN29F040-70J | 4 Megabit (512K x 8-bit) flach memory. Speed 70ns. 5.0V operation for read/write/erase operations. | EON | PLCC | 32 | 0°C | 70°C | 223K |
| 106. | EN29F040-70JI | 4 Megabit (512K x 8-bit) flach memory. Speed 70ns. 5.0V operation for read/write/erase operations. | EON | PLCC | 32 | -40°C | 85°C | 223K |
| 107. | EN29F040-70P | 4 Megabit (512K x 8-bit) flach memory. Speed 70ns. 5.0V operation for read/write/erase operations. | EON | PDIP | 32 | 0°C | 70°C | 223K |
| 108. | EN29F040-70PI | 4 Megabit (512K x 8-bit) flach memory. Speed 70ns. 5.0V operation for read/write/erase operations. | EON | PDIP | 32 | -40°C | 85°C | 223K |
| 109. | EN29F040-70T | 4 Megabit (512K x 8-bit) flach memory. Speed 70ns. 5.0V operation for read/write/erase operations. | EON | TSOP | 32 | 0°C | 70°C | 223K |
| 110. | EN29F040-70TI | 4 Megabit (512K x 8-bit) flach memory. Speed 70ns. 5.0V operation for read/write/erase operations. | EON | TSOP | 32 | -40°C | 85°C | 223K |
| 111. | MAX40-7.0C | 7.00V; 50mA ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications | MDE | - | 2 | - | - | 810K |
| 112. | MAX40-7.0CA | 7.00V; 50mA ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications | MDE | - | 2 | - | - | 810K |
| 113. | MAX40-7.5C | 7.50V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications | MDE | - | 2 | - | - | 810K |
| 114. | MAX40-7.5CA | 7.50V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications | MDE | - | 2 | - | - | 810K |
| 115. | MAX40-70.0C | 70.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications | MDE | - | 2 | - | - | 810K |
| 116. | QSBT40-7 | 30V; 200mA quad data line schottky bus terminator. PN junction guard ring for transient and ESD protection | DIODS | SOT-363 | 6 | -55°C | 125°C | 51K |
| 117. | SST29SF040-70-4C-PH | Small-sector flash | SSTI | PDIP | 32 | 0°C | 70°C | 290K |
| 118. | SST29SF040-70-4I-PH | Small-sector flash | SSTI | PDIP | 32 | -40°C | 85°C | 290K |
| 119. | SST29VF040-70-4C-PH | Small-sector flash | SSTI | PDIP | 32 | 0°C | 70°C | 290K |
| 120. | SST29VF040-70-4I-PH | Small-sector flash | SSTI | PDIP | 32 | -40°C | 85°C | 290K |
