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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 961. | CL81188AQC240-2 | Laser processed logic device | CLELO | QFP | 208 | 0°C | 70°C | 118K |
| 962. | CL81188AQI240-4 | Laser processed logic device | CLELO | QFP | 240 | -40°C | 85°C | 118K |
| 963. | EN29F040-45JI | 4 Megabit (512K x 8-bit) flach memory. Speed 45ns. 5.0V operation for read/write/erase operations. | EON | PLCC | 32 | -40°C | 85°C | 223K |
| 964. | EN29F040-45PI | 4 Megabit (512K x 8-bit) flach memory. Speed 45ns. 5.0V operation for read/write/erase operations. | EON | PDIP | 32 | -40°C | 85°C | 223K |
| 965. | EN29F040-45T | 4 Megabit (512K x 8-bit) flach memory. Speed 45ns. 5.0V operation for read/write/erase operations. | EON | TSOP | 32 | 0°C | 70°C | 223K |
| 966. | EN29F040-45TI | 4 Megabit (512K x 8-bit) flach memory. Speed 45ns. 5.0V operation for read/write/erase operations. | EON | TSOP | 32 | -40°C | 85°C | 223K |
| 967. | EN29F040-55J | 4 Megabit (512K x 8-bit) flach memory. Speed 55ns. 5.0V operation for read/write/erase operations. | EON | PLCC | 32 | 0°C | 70°C | 223K |
| 968. | EN29F040-55JI | 4 Megabit (512K x 8-bit) flach memory. Speed 55ns. 5.0V operation for read/write/erase operations. | EON | PLCC | 32 | -40°C | 85°C | 223K |
| 969. | EN29F040-55PI | 4 Megabit (512K x 8-bit) flach memory. Speed 55ns. 5.0V operation for read/write/erase operations. | EON | PDIP | 32 | -40°C | 85°C | 223K |
| 970. | EN29F040-55T | 4 Megabit (512K x 8-bit) flach memory. Speed 55ns. 5.0V operation for read/write/erase operations. | EON | TSOP | 32 | 0°C | 70°C | 223K |
| 971. | EN29F040-55TI | 4 Megabit (512K x 8-bit) flach memory. Speed 55ns. 5.0V operation for read/write/erase operations. | EON | TSOP | 32 | -40°C | 85°C | 223K |
| 972. | EN29F040-70JI | 4 Megabit (512K x 8-bit) flach memory. Speed 70ns. 5.0V operation for read/write/erase operations. | EON | PLCC | 32 | -40°C | 85°C | 223K |
| 973. | EN29F040-70PI | 4 Megabit (512K x 8-bit) flach memory. Speed 70ns. 5.0V operation for read/write/erase operations. | EON | PDIP | 32 | -40°C | 85°C | 223K |
| 974. | EN29F040-70T | 4 Megabit (512K x 8-bit) flach memory. Speed 70ns. 5.0V operation for read/write/erase operations. | EON | TSOP | 32 | 0°C | 70°C | 223K |
| 975. | EN29F040-70TI | 4 Megabit (512K x 8-bit) flach memory. Speed 70ns. 5.0V operation for read/write/erase operations. | EON | TSOP | 32 | -40°C | 85°C | 223K |
| 976. | EN29F040-90J | 4 Megabit (512K x 8-bit) flach memory. Speed 90ns. 5.0V operation for read/write/erase operations. | EON | PLCC | 32 | 0°C | 70°C | 223K |
| 977. | EN29F040-90JI | 4 Megabit (512K x 8-bit) flach memory. Speed 90ns. 5.0V operation for read/write/erase operations. | EON | PLCC | 32 | -40°C | 85°C | 223K |
| 978. | EN29F040-90PI | 4 Megabit (512K x 8-bit) flach memory. Speed 90ns. 5.0V operation for read/write/erase operations. | EON | PDIP | 32 | -40°C | 85°C | 223K |
| 979. | EN29F040-90T | 4 Megabit (512K x 8-bit) flach memory. Speed 90ns. 5.0V operation for read/write/erase operations. | EON | TSOP | 32 | 0°C | 70°C | 223K |
| 980. | EN29F040-90TI | 4 Megabit (512K x 8-bit) flach memory. Speed 90ns. 5.0V operation for read/write/erase operations. | EON | TSOP | 32 | -40°C | 85°C | 223K |
