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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 658 Displaying: 481 - 500| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 481. | 2N3414 | 500mW NPN silicon transistor | ME | - | 3 | -55°C | 150°C | 48K | | 482. | 2N3417 | 500mW NPN silicon transistor | ME | - | 3 | -55°C | 150°C | 138K | | 483. | 3410A | 1000 V three phase bridge 18-20 A forward current, 3000 ns recovery time | VMI | - | 5 | -55°C | 150°C | 182K | | 484. | 3410B | 1000 V three phase bridge 18-20 A forward current, 3000 ns recovery time | VMI | - | 5 | -55°C | 150°C | 249K | | 485. | 3410FA | 1000 V three phase bridge 18-20 A forward current, 150 ns recovery time | VMI | - | 5 | -55°C | 150°C | 182K | | 486. | 3410FB | 1000 V three phase bridge 18-20 A forward current,150 ns recovery time | VMI | - | 5 | -55°C | 150°C | 249K | | 487. | 3410UFA | 1000 V three phase bridge 18-20 A forward current, 70 ns recovery time | VMI | - | 5 | -55°C | 150°C | 182K | | 488. | 3410UFB | 1000 V three phase bridge 18-20 A forward current,70 ns recovery time | VMI | - | 5 | -55°C | 150°C | 249K | | 489. | GMS34140TK | Program memory: 1024 bytes, 300KHz-500KHz, 4-5 V, 4 BIT single chip microcomputer | HYNIX | DIP | 24 | -20°C | 70°C | 328K | | 490. | GMS34140TM | Program memory: 1024 bytes, 300KHz-500KHz, 4-5 V, 4 BIT single chip microcomputer | HYNIX | DIP | 24 | -20°C | 70°C | 328K | | 491. | IRF3415 | HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.042 Ohm, ID = 43A | IRF | - | 3 | -55°C | 175°C | 94K | | 492. | IRF3415L | HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.042 Ohm, ID = 43A | IRF | TO-262 | 3 | -55°C | 175°C | 156K | | 493. | IRF3415S | HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.042 Ohm, ID = 43A | IRF | DDPak | 3 | -55°C | 175°C | 156K | | 494. | IRF5M3415 | HEXFET power MOSFET thru-hole. BVDSS = 150V, RDS(on) = 0.049 Ohm, ID = 35A | IRF | TO-254AA | 3 | -55°C | 150°C | 113K | | 495. | IRF5N3415 | HEXFET power MOSFET surface mount. BVDSS = 150V, RDS(on) = 0.042 Ohm, ID = 37.5A | IRF | SMD-1 | 3 | -55°C | 150°C | 117K | | 496. | IRFP3415 | HEXFET power MOSFET. VDSS = 150 V, RDS(on) = 0.042 Ohm, ID = 43 A | IRF | TO-247AC | 3 | -55°C | 175°C | 92K | | 497. | KBPC3410G | 1000V, 10A glass passivated bridge rectifier | WTE | - | 4 | -65°C | 150°C | 55K | | 498. | KBPC3410G | 1000V, 10A glass passivated bridge rectifier | WTE | - | 4 | -65°C | 150°C | 55K | | 499. | KBPC3410GW | 1000V, 10A glass passivated bridge rectifier | WTE | - | 4 | -65°C | 150°C | 55K | | 500. | KBPC3410GW | 1000V, 10A glass passivated bridge rectifier | WTE | - | 4 | -65°C | 150°C | 55K |
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