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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 821. | AAT3220IQY-3.5-T1 | 3.5 V, 150mA NanoPower LDO linear regulator | AATI | SOT89 | 3 | -40°C | 85°C | 460K |
| 822. | C1322P | Channel photomultiplexer, 1/2 inche, special type for photon counts, dark counts 4 cps. | PERK | - | 4 | 0°C | 50°C | 859K |
| 823. | LM322N | Precision timers | NSC | DIP | 14 | 0°C | 70°C | 281K |
| 824. | LM322N | Precision timers | NSC | DIP | 14 | 0°C | 70°C | 281K |
| 825. | LS-3229 | Thyratron. Peak anode voltage epy 70 kV, peak anode current ib 15000 a, average anode current lb 2 Adc, RMS anode current lb 45 Aac. Seated height x tube width 6.4 x 3 inches. | PERK | Ceramic-metal | 4 | - | - | 49K |
| 826. | MT28C3224P20FL-80B | Low voltage, extended temperature flash and SRAM COMBO memory | MICRN | FBGA | 66 | -40°C | 85°C | 498K |
| 827. | MT28C3224P20FL-80BET | Low voltage, extended temperature flash and SRAM COMBO memory | MICRN | FBGA | 66 | -40°C | 85°C | 498K |
| 828. | MT28C3224P20FL-85B | Low voltage, extended temperature flash and SRAM COMBO memory | MICRN | FBGA | 66 | -40°C | 85°C | 498K |
| 829. | MT28C3224P20FL-85BET | Low voltage, extended temperature flash and SRAM COMBO memory | MICRN | FBGA | 66 | -40°C | 85°C | 498K |
| 830. | MT28C3224P20FL-85T | Low voltage, extended temperature flash and SRAM COMBO memory | MICRN | FBGA | 66 | -40°C | 85°C | 498K |
| 831. | MT28C3224P20FL-85TET | Low voltage, extended temperature flash and SRAM COMBO memory | MICRN | FBGA | 66 | -40°C | 85°C | 498K |
| 832. | VS32244Q | High speed CMOS Vswitch dual 4-bit bus switches | VAISH | QSOP | 20 | -40°C | 85°C | 56K |
| 833. | VS32244QX | High speed CMOS Vswitch dual 4-bit bus switches | VAISH | QSOP | 20 | -40°C | 85°C | 56K |
| 834. | VS32245Q | High speed CMOS Vswitch 8-bit bus switches | VAISH | QSOP | 20 | -40°C | 85°C | 55K |
| 835. | VS32245QX | High speed CMOS Vswitch 8-bit bus switches | VAISH | QSOP | 20 | -40°C | 85°C | 55K |
| 836. | VS32257Q | Quad 2:1 mux/demux VSwitch | VAISH | QSOP | 16 | -40°C | 85°C | 56K |
| 837. | VT73227-D | 27 MHz 3.3V VCXO (voltage-controlled crystal oscillator) | VAISH | DIE | - | 0°C | 70°C | 67K |
| 838. | VT73227-S1 | 27 MHz 3.3V VCXO (voltage-controlled crystal oscillator) | VAISH | SOIC | 8 | 0°C | 70°C | 67K |
| 839. | VT73227-S1X | 27 MHz 3.3V VCXO (voltage-controlled crystal oscillator) | VAISH | SOIC | 8 | 0°C | 70°C | 67K |
| 840. | VTE3322LA | GaAs infrared emitting diode. Irradiance(typ) 1.3 mW/cm2 (distance 10.16 mm, diameter 2.1 mm). | PERK | T-1 | 2 | -40°C | 100°C | 22K |
