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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 361. | CT30SM-12 | 600V, 30A general purpose IGBT | PWRX | TO-3P | - | - | - | 40K |
| 362. | FK30SM-6 | 300V fast recovery body diode MOSFET | PWRX | TO-3P | - | - | - | 59K |
| 363. | FS30SM-3 | 150V trench gate MOSFET | PWRX | TO-3P | - | - | - | 46K |
| 364. | FS30SM-5 | 250V planar process MOSFET | PWRX | TO-3P | - | - | - | 49K |
| 365. | FS30SM-6 | 300V planar process MOSFET | PWRX | TO-3P | - | - | - | 49K |
| 366. | FX30SMJ-3 | 150V p-channel MOSFET | PWRX | TO-3P | - | - | - | 75K |
| 367. | PDM4M4030S10M | 64K x 32 CMOS static RAM module | PARAD | SIMM | 64 | 0°C | 70°C | 270K |
| 368. | PDM4M4030S12M | 64K x 32 CMOS static RAM module | PARAD | SIMM | 64 | 0°C | 70°C | 270K |
| 369. | PDM4M4030S15M | 64K x 32 CMOS static RAM module | PARAD | SIMM | 64 | 0°C | 70°C | 270K |
| 370. | PDM4M4030S20M | 64K x 32 CMOS static RAM module | PARAD | SIMM | 64 | 0°C | 70°C | 270K |
| 371. | PDM4M4030S25M | 64K x 32 CMOS static RAM module | PARAD | SIMM | 64 | 0°C | 70°C | 270K |
| 372. | RC30S01 | Silicon silastic cell rectifier. Max repetitive peak reverse voltage 100 V. Max average forward current 30 A. | SSE | - | - | -50°C | 150°C | 14K |
| 373. | RC30S01G | Silicon GPP cell rectifier. Max repetitive peak reverse voltage 100 V. Max average forward current 30 A. | SSE | - | - | -50°C | 150°C | 17K |
| 374. | RC30S02 | Silicon silastic cell rectifier. Max repetitive peak reverse voltage 200 V. Max average forward current 30 A. | SSE | - | - | -50°C | 150°C | 14K |
| 375. | RC30S02G | Silicon GPP cell rectifier. Max repetitive peak reverse voltage 200 V. Max average forward current 30 A. | SSE | - | - | -50°C | 150°C | 17K |
| 376. | RC30S04 | Silicon silastic cell rectifier. Max repetitive peak reverse voltage 400 V. Max average forward current 30 A. | SSE | - | - | -50°C | 150°C | 14K |
| 377. | RC30S04G | Silicon GPP cell rectifier. Max repetitive peak reverse voltage 400 V. Max average forward current 30 A. | SSE | - | - | -50°C | 150°C | 17K |
| 378. | RC30S06G | Silicon GPP cell rectifier. Max repetitive peak reverse voltage 600 V. Max average forward current 30 A. | SSE | - | - | -50°C | 150°C | 17K |
| 379. | RC30S08G | Silicon GPP cell rectifier. Max repetitive peak reverse voltage 800 V. Max average forward current 30 A. | SSE | - | - | -50°C | 150°C | 17K |
| 380. | RC30S10G | Silicon GPP cell rectifier. Max repetitive peak reverse voltage 1000 V. Max average forward current 30 A. | SSE | - | - | -50°C | 150°C | 17K |
