We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet.com is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
All Data provided on this web site and the associated web pages is provided as is. It is intended to be for general information only, and is thus provided without any express or implied warranty or guarantee. It is the responsibility of the user or reader to ensure and confirm that this information is accurate and correct with the original publisher of the data sheet.
Most of the data sheets below are in the "pdf" format so it would be adviseable to use Adobe Acrobat Reader.
| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 821. | DT3055 | 60V; N-channel enchancement mode field effect transistor | DIODS | SOT-223 | 4 | -65°C | 150°C | 73K |
| 822. | DT3055L | 60V; N-channel enchancement mode field effect transistor | DIODS | SOT-223 | 4 | -65°C | 150°C | 73K |
| 823. | FR305G | Glass passivated fast recovery rectifier. Maximum recurrent peak reverse voltage 600 V. Maximum average forward rectified current 3.0 A. | BYTES | DO-27 | 2 | -65°C | 175°C | 153K |
| 824. | FR305G | 600 V, 3 A, fast GPP diode | LRC | DO | 2 | - | - | 51K |
| 825. | FR305G | Glass passivated fast recovery rectifier. Max repetitive peak reverse voltage 600 V. Max average forward rectified current 3.0 A. | SSE | - | 2 | -65°C | 150°C | 15K |
| 826. | FR305GP | 3.0A, 600V ultra fast recovery rectifier | MCC | - | - | - | - | 80K |
| 827. | HER305G | 400 V, 3 A, high efficiency GPP diode | LRC | DO | 2 | - | - | 64K |
| 828. | HI3055 | Emitter to base voltage:5V 10A NPN epitaxial planar transistor for general purpose of amplifier and switching applications | HSMC | TO-251 | 3 | - | - | 21K |
| 829. | HJ3055 | Emitter to base voltage:5V 10A NPN epitaxial planar transistor for general purpose of amplifier and switching appications | HSMC | TO-252 | 3 | - | - | 32K |
| 830. | HMJE3055T | Emitter to base voltage:5V; 10A PNP epitaxial planar transistor for general purpose of amplifier and switching applications | HSMC | TO-220 | 3 | - | - | 35K |
| 831. | SBG3050CT | 50V; 30A surface mount schottky barrier rectifier. For use in low voltage, high frequency inverters, free wheeling and polarity protection applications | DIODS | DPAK | 3 | -65°C | 150°C | 47K |
| 832. | SBL3050CT | 50V; 30A high voltage schottky barrier rectifier. For use in low voltage, high frequency inverters, free wheeling and polarity protection application | DIODS | TO220AB | 3 | -65°C | 150°C | 64K |
| 833. | SBL3050PT | 50V; 30A schottky barrier rectifier. For use in low voltage, high frequency inverters, free wheeling and polarity protection application | DIODS | TO-3P | 3 | -65°C | 150°C | 64K |
| 834. | SC83053 | 4.5-5.5V keyboard encoder for IBM PC AT and all compatible machines | SILAN | - | 39 | - | - | 483K |
| 835. | SF305A | Super fast rectifier. Negative CT. Maximum recurrent peak reverse voltage 300 V. Maximum average forward rectified current 30.0 A. | BYTES | TO-247 | 3 | -65°C | 150°C | 166K |
| 836. | SF305C | Super fast rectifier. Positive CT. Maximum recurrent peak reverse voltage 300 V. Maximum average forward rectified current 30.0 A. | BYTES | TO-247 | 3 | -65°C | 150°C | 166K |
| 837. | SR3050A | Schottky barrier rectifier. Negative CT. Maximum recurrent peak reverse voltage 50 V. Maximum average forward rectified current 30 A. | BYTES | TO-247 | 3 | -65°C | 150°C | 156K |
| 838. | SR3050C | Schottky barrier rectifier. Positive CT. Maximum recurrent peak reverse voltage 50 V. Maximum average forward rectified current 30 A. | BYTES | TO-247 | 3 | -65°C | 150°C | 156K |
| 839. | TSMBJ0305C-064 | Ipp=50A, Vdrm=58V zener diode | MCC | SMB | - | - | - | 438K |
| 840. | TSMBJ0305C-064 | Ipp=50A, Vdrm=58V zener diode | MCC | SMB | - | - | - | 438K |
| 841. | TSMBJ0305C-072 | Ipp=50A, Vdrm=65V zener diode | MCC | SMB | - | - | - | 705K |
