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Found: 168      Displaying: 21 - 40
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
21.
2N6040Darlington complementary silicon power transistor
MOSP
TO-220
3
-65°C
150°C
199K
22.
2N6041Darlington complementary silicon power transistor
MOSP
TO-220
3
-65°C
150°C
199K
23.
2N6042Darlington complementary silicon power transistor
MOSP
TO-220
3
-65°C
150°C
199K
24.
2N6043Darlington complementary silicon power transistor
MOSP
TO-220
3
-65°C
150°C
199K
25.
2N6044Darlington complementary silicon power transistor
MOSP
TO-220
3
-65°C
150°C
199K
26.
2N6045Darlington complementary silicon power transistor
MOSP
TO-220
3
-65°C
150°C
199K
27.
2N6050Darlington complementary silicon power transistor
MOSP
TO-3
2
-65°C
200°C
188K
28.
2N6051Darlington complementary silicon power transistor
MOSP
TO-3
2
-65°C
200°C
188K
29.
2N6076 Silicon PNP Small Signal Transistor
FAIR
-
-
-
-
18K
30.
HGT1S12N60A4DS600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
INTRS
-
-
-
-
394K
31.
HGT1S12N60A4S600V, SMPS Series N-Channel IGBT
INTRS
-
-
-
-
115K
32.
HGT1S12N60B3DS27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
INTRS
-
-
-
-
117K
33.
HGTG12N60A4600V, SMPS Series N-Channel IGBT
INTRS
-
-
-
-
115K
34.
HGTG12N60A4D600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
INTRS
-
-
-
-
394K
35.
HGTP12N60A4600V, SMPS Series N-Channel IGBT
INTRS
-
-
-
-
115K
36.
HGTP12N60A4D600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
INTRS
-
-
-
-
394K
37.
HGTP12N60B3D27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
INTRS
-
-
-
-
117K
38.
HGTP12N60B3D27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
INTRS
-
-
-
-
117K
39.
MTB2N60ETMOS E-FET high energy power FET
MOT
DPAK
4
-55°C
150°C
271K
40.
MTP2N60ETMOS E-FET power field effect transistor
MOT
-
4
-55°C
150°C
219K
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