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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 81. | 2N5002 | Chip: 5.5V; 5A geometry 9202; polarity NPN | SECOA | TO-59 | 3 | -65°C | 200°C | 51K |
| 82. | 2N5003 | Chip: geometry 9221; polarity NPN | SECOA | - | - | - | - | 33K |
| 83. | 2N5003 | Chip: 5.5V; 10A geometry 9702; polarity PNP | SECOA | TO-59 | 3 | -65°C | 200°C | 152K |
| 84. | 2N5004 | Chip: 5.5V; 5A geometry 9702; polarity PNP | SECOA | TO-59 | 3 | -65°C | 200°C | 51K |
| 85. | 2N5005 | Chip: geometry 9221; polarity NPN | SECOA | - | - | - | - | 33K |
| 86. | 2N5005 | Chip: 5.5V; 10A geometry 9702; polarity PNP | SECOA | TO-59 | 3 | -65°C | 200°C | 153K |
| 87. | 2N5065 | 400 V, 0.8 A sensitive SCR | TECOR | - | 3 | -65°C | 125°C | 2M |
| 88. | 2N5087 | 50 V, PNP general purpose transistor | PHLPS | - | 3 | -65°C | 150°C | 49K |
| 89. | 2N5088 | 35 V, NPN general purpose transistor | PHLPS | - | 3 | -65°C | 150°C | 49K |
| 90. | H2N5087 | 50mA PNP epitaxial planar transistor for low noise, high gain, general purpose amplifier applications | HSMC | - | 3 | - | - | 39K |
| 91. | H2N5088 | 50mA NPN epitaxial planar transistor for low noise, high gain, general purpose amplifier applications | HSMC | - | 3 | - | - | 35K |
| 92. | H2N5089 | 50mA NPN epitaxial planar transistor | HSMC | - | 3 | - | - | 35K |
| 93. | MK45H02N50 | Very fast CMOS 1K x 9 BiPORT FIFO, 50ns | STM | PSDIP | 28 | 0°C | 70°C | 696K |
| 94. | MK45H02N50 | Very fast CMOS 1K x 9 BiPORT FIFO, 50ns | STM | PDIP | 28 | 0°C | 70°C | 696K |
| 95. | MK45H12N50 | Very fast CMOS 1K x 9 BiPORT FIFO, 50ns | STM | PSDIP | 28 | 0°C | 70°C | 696K |
| 96. | MK45H12N50 | Very fast CMOS 1K x 9 BiPORT FIFO, 50ns | STM | PDIP | 28 | 0°C | 70°C | 696K |
| 97. | PHB2N50 | 500 V, power MOS transistor | PHLPS | SOT | 3 | -55°C | 150°C | 59K |
| 98. | PHP2N50 | 500 V, power MOS transistor | PHLPS | TO | 3 | - | - | 56K |
| 99. | PHU2N50E | 500 V, power MOS transistor avalanche energy rated | PHLPS | SOT | 3 | -55°C | 150°C | 64K |
| 100. | PHX2N50E | 500 V, power MOS transistor avalanche energy rated | PHLPS | SOT | 3 | -55°C | 150°C | 77K |
