We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet.com is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
All Data provided on this web site and the associated web pages is provided as is. It is intended to be for general information only, and is thus provided without any express or implied warranty or guarantee. It is the responsibility of the user or reader to ensure and confirm that this information is accurate and correct with the original publisher of the data sheet.
Most of the data sheets below are in the "pdf" format so it would be adviseable to use Adobe Acrobat Reader.
| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 61. | 2N3903 | General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. | USHA | - | 3 | 0°C | 150°C | 72K |
| 62. | 2N3904 | Vce=1.0V transistor | MCC | - | - | - | - | 96K |
| 63. | 2N3904 | Vce=1.0V transistor | MCC | - | - | - | - | 96K |
| 64. | 2N3904 | 60 V, NPN small signal transistor | TRSYS | - | 3 | -55°C | 150°C | 32K |
| 65. | 2N3904 | General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. | USHA | - | 3 | 0°C | 150°C | 71K |
| 66. | 2N3905 | 350mW PNP silicon planar epitaxial transistor | ME | TO-92A | 3 | -55°C | 150°C | 112K |
| 67. | 2N3905 | General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. | USHA | - | 3 | 0°C | 150°C | 73K |
| 68. | 2N3906 | Vce=1.0V transistor | MCC | - | - | - | - | 93K |
| 69. | 2N3906 | 350mW PNP silicon planar epitaxial transistor | ME | TO-92A | 3 | -55°C | 150°C | 112K |
| 70. | 2N3906 | 40 V, PNP small signal transistor | TRSYS | - | 3 | -55°C | 150°C | 304K |
| 71. | 2N3906 | General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. | USHA | - | 3 | 0°C | 150°C | 73K |
| 72. | 2N3960 | Chip: geometry 0003; polarity NPN | SECOA | - | - | - | - | 29K |
| 73. | 2N3960UB | Chip: geometry 0003; polarity NPN | SECOA | - | - | - | - | 29K |
| 74. | 2N3962 | 360mW PNP silicon planar epitaxial transistor | ME | TO-92A | 3 | -55°C | 150°C | 43K |
| 75. | 2N3998 | Chip: geometry 9201; polarity NPN | SECOA | - | - | - | - | 33K |
| 76. | 2N3999 | Chip: geometry 9201; polarity NPN | SECOA | - | - | - | - | 33K |
| 77. | H2N3904 | 200mA NPN epitaxial planar transistor for general purpose switching and amplifier applications | HSMC | - | 3 | - | - | 36K |
| 78. | H2N3906 | 200mA PNP epitaxial planar transistor for general purpose switching and amplifier applications | HSMC | - | 3 | - | - | 37K |
| 79. | HN/2N3903 | 60 V, NPN silicon expitaxial planar transistor | HONEY | - | 3 | - | - | 166K |
| 80. | HN/2N3904 | 60 V, NPN silicon expitaxial planar transistor | HONEY | - | 3 | - | - | 166K |
