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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 41. | 2N3008 | 200 V, silicon controlled rectifier | BOCA | TO-18 | 3 | - | - | 31K |
| 42. | 2N3019 | 800mW NPN silicon AF medium power transistor | ME | TO-39 | 3 | - | - | 144K |
| 43. | 2N3019 | Chip: geometry 4500; polarity PNP | SECOA | - | - | - | - | 31K |
| 44. | 2N3019 | Chip: 7.0V; geometry 4500; polarity NPN | SECOA | TO-5 | 3 | -65°C | 200°C | 45K |
| 45. | 2N3019 | Chip: 7.0V; geometry 4500; polarity NPN | SECOA | TO-39 | 3 | -65°C | 200°C | 45K |
| 46. | 2N3019S | Chip: geometry 4500; polarity PNP | SECOA | - | - | - | - | 31K |
| 47. | 2N3019UB | Chip: geometry 4500; polarity PNP | SECOA | - | - | - | - | 31K |
| 48. | 2N3020 | 800mW NPN silicon AF medium power transistor | ME | TO-39 | 3 | - | - | 144K |
| 49. | 2N3053 | Silicon planar epitaxial transistor | ME | TO-39 | 3 | -65°C | 200°C | 203K |
| 50. | 2N3053 | Silicon planar epitaxial transistor | ME | TO-92A | 3 | -65°C | 200°C | 203K |
| 51. | 2N3055 | NPN silicon power transistor. 15Amp, 60V, 115Watt. These devices are designed for general purpose switching and amplifier applications. | USHA | TO-204AA | 3 | -65°C | 200°C | 48K |
| 52. | 2N3055 | High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W. | USHA | TO-3 | 3 | -65°C | 200°C | 48K |
| 53. | 2N3055H | NPN silicon power transistor. 15Amp, 100V, 115Watt. These devices are designed for general purpose switching and amplifier applications. | USHA | TO-204AA | 3 | -65°C | 200°C | 48K |
| 54. | 2N3057 | Silicon planar epitaxial transistor | ME | TO-39 | 3 | -65°C | 200°C | 203K |
| 55. | 2N3057 | Silicon planar epitaxial transistor | ME | TO-92A | 3 | -65°C | 200°C | 203K |
| 56. | 2N3057 | Chip: geometry 4500; polarity PNP | SECOA | - | - | - | - | 31K |
| 57. | 2N3057A | Chip: geometry 4500; polarity PNP | SECOA | - | - | - | - | 31K |
| 58. | IXFH52N30Q | 300V HiPerFET power MOSFET Q-class | IXYS | TO-247 | 3 | -55°C | 150°C | 70K |
| 59. | IXFK52N30Q | 300V HiPerFET power MOSFET Q-class | IXYS | TO-264 | 3 | -55°C | 150°C | 70K |
| 60. | IXFT52N30Q | 300V HiPerFET power MOSFET Q-class | IXYS | TO-268 | 3 | -55°C | 150°C | 70K |
