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Found: 594      Displaying: 481 - 500
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
481.
2N6190Chip: geometry 9700; polarity PNP
SECOA
-
-
-
-
31K
482.
2N6191Chip: geometry 9700; polarity PNP
SECOA
-
-
-
-
31K
483.
2N6192Chip: geometry 9700; polarity PNP
SECOA
-
-
-
-
31K
484.
2N6193Chip: geometry 9700; polarity PNP
SECOA
-
-
-
-
31K
485.
2N6193Chip: 5.0V; 1.0A geometry 9700; polarity PNP
SECOA
TO-39
3
-65°C
200°C
46K
486.
2N6515Ic=500mA, Vce=10V transistor
MCC
-
-
-
-
427K
487.
2N6987Chip: geometry 0600; polarity PNP
SECOA
-
-
-
-
31K
488.
2N6987Chip: 5.0V; 600mA geometry 0600; polarity PNP
SECOA
DIP
14
-65°C
200°C
69K
489.
2N6988Chip: 5.0V; 600mA geometry 0600; polarity PNP
SECOA
Flat Pack
14
-65°C
200°C
71K
490.
2N6989Chip: 6.0V; 800mA geometry 0400; polarity NPN
SECOA
Flat Pack
14
-65°C
200°C
53K
491.
H2N638810A NPN epitaxial planar transistor for general purpose amplifier and switching applications
HSMC
TO220AB
3
-
-
35K
492.
H2N6426500mA NPN epitaxial planar transistor
HSMC
-
3
-
-
35K
493.
H2N6427500mA NPN epitaxial planar transistor
HSMC
-
3
-
-
35K
494.
H2N6517500mA NPN epitaxial planar transistor for general purpose applications requiring high breakdown voltages
HSMC
-
3
-
-
41K
495.
H2N6520500mA PNP epitaxial planar transistor for general purpose applications requiring high breakdown voltages
HSMC
-
3
-
-
36K
496.
H2N666810A PNP epitaxial planar transistor for general purpose amplifier and switching applications
HSMC
TO220AB
3
-
-
34K
497.
H2N6718L2A 1A NPN epitaxial planar transistor for general purpose medium power amplifier and switching applications
HSMC
-
3
-
-
42K
498.
H2N6718V1A NPN epitaxial planar transistor for general purpose medium power amplifier and switching
HSMC
TO-126ML
3
-
-
39K
499.
SSP2N60B600V, 2A N-channel MOSFET
FAIR
TO-220
3
-55°C
150°C
856K
500.
SSS2N60B600V, 2A N-channel MOSFET
FAIR
TO-220F
3
-55°C
150°C
856K
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