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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 441. | 2N6428 | Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. | USHA | - | 3 | 0°C | 150°C | 46K |
| 442. | 2N6428A | Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. | USHA | - | 3 | 0°C | 150°C | 46K |
| 443. | 2N6515 | High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. | USHA | - | 3 | 0°C | 150°C | 47K |
| 444. | 2N6516 | High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. | USHA | - | 3 | 0°C | 150°C | 69K |
| 445. | 2N6517 | High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW. | USHA | - | 3 | 0°C | 150°C | 47K |
| 446. | 2N6547 | Transistor polarity NPN Voltage Vce sat max 5 V Voltage Vceo 400 V Current Ic @ Vce sat 15 A Time fall @ Ic 0.7 ?s Current Ic av. 15 A Power Ptot 175 W Voltage Vces 850 V | STM | TO-3 | - | - | - | 78K |
| 447. | 2N6660 | 60V N-channel enhancement - Mode vertical DMOS FET | SUTEX | TO-39 | 3 | -55°C | 150°C | 21K |
| 448. | 2N6661 | 90V N-channel enhancement - Mode vertical DMOS FET | SUTEX | TO-39 | 3 | -55°C | 150°C | 21K |
| 449. | FQB2N60 | 600V N-Channel MOSFET, 2.4A | FAIR | D2PAK | 3 | -55°C | 150°C | 580K |
| 450. | FQI2N60 | 600V N-Channel MOSFET, 2.4A | FAIR | I2-PAK | 3 | -55°C | 150°C | 580K |
| 451. | GMG112N60FF | 1200 V single-phase rectifier bridge | GPSEM | - | - | - | - | 159K |
| 452. | GMG112N60FS | 1200 V single-phase rectifier bridge | GPSEM | - | - | - | - | 159K |
| 453. | GMG112N60LL | 1200 V single-phase rectifier bridge | GPSEM | - | - | - | - | 159K |
| 454. | GMG112N60SF | 1200 V single-phase rectifier bridge | GPSEM | - | - | - | - | 159K |
| 455. | GMG112N60SS | 1200 V single-phase rectifier bridge | GPSEM | - | - | - | - | 159K |
| 456. | HGTG12N60C3D | TRANSISTOR IGBT TO-247 | FAIR | - | - | - | - | 102K |
| 457. | HGTP12N60C3 | TRANSISTOR IGBT TO-220 | FAIR | - | - | - | - | 131K |
| 458. | IXGA12N60B | 600V HiPerFAST IGBT | IXYS | TO-263AA | 3 | -55°C | 150°C | 71K |
| 459. | IXGP12N60B | 600V HiPerFAST IGBT | IXYS | - | 3 | -55°C | 150°C | 71K |
| 460. | IXGT32N60BD1 | 600V HiPerFAST IGBT with diode | IXYS | TO-268 | 3 | -55°C | 150°C | 69K |
