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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 21. | 2N5307 | 400mW NPN darlington amplifier | ME | TO-928 | 3 | -55°C | 150°C | 91K |
| 22. | 2N5308 | 400mW NPN darlington amplifier | ME | TO-928 | 3 | -55°C | 150°C | 91K |
| 23. | 2N5322 | 75 V, NPN silicon switching transistor | BOCA | TO-39 | 3 | -65°C | 200°C | 77K |
| 24. | 2N5339 | Chip: geometry 9201; polarity NPN | SECOA | - | - | - | - | 33K |
| 25. | 2N5367 | 360mW PNP silicon transistor | ME | - | 3 | -55°C | 150°C | 43K |
| 26. | 2N5367 | 360mW PNP silicon transistor | ME | TO-92B | 3 | -55°C | 150°C | 57K |
| 27. | 2N5368 | 500mW complementary silicon general purpose amplifier | ME | TO-92F | 3 | -55°C | 150°C | 86K |
| 28. | 2N5369 | 500mW complementary silicon general purpose amplifier | ME | TO-92F | 3 | -55°C | 150°C | 86K |
| 29. | 2N5370 | 500mW complementary silicon general purpose amplifier | ME | TO-92F | 3 | -55°C | 150°C | 86K |
| 30. | 2N5371 | 500mW complementary silicon general purpose amplifier | ME | TO-92F | 3 | -55°C | 150°C | 86K |
| 31. | 2N5372 | 500mW complementary silicon general purpose amplifier | ME | TO-92F | 3 | -55°C | 150°C | 86K |
| 32. | 2N5373 | 500mW complementary silicon general purpose amplifier | ME | TO-92F | 3 | -55°C | 150°C | 86K |
| 33. | 2N5374 | 500mW complementary silicon general purpose amplifier | ME | TO-92F | 3 | -55°C | 150°C | 86K |
| 34. | 2N5375 | 500mW complementary silicon general purpose amplifier | ME | TO-92F | 3 | -55°C | 150°C | 86K |
| 35. | 2N5397 | N-Channel silicon junction field-effect transistor | IFET | TO-72 | 4 | - | - | 91K |
| 36. | 2N5398 | N-Channel silicon junction field-effect transistor | IFET | TO-72 | 4 | - | - | 91K |
| 37. | H2N5366 | 500mA PNP epitaxial planar transistor for general purpose applications requiring high breakdown voltages | HSMC | - | 3 | - | - | 35K |
