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Found: 433      Displaying: 261 - 280
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
261.
2N4029800mW PNP silicon planar epitaxial transistor
ME
-
3
-65°C
150°C
39K
262.
2N4030800mW PNP silicon AF medium power amplifier
ME
TO-39
3
-65°C
200°C
143K
263.
2N4031800mW PNP silicon AF medium power amplifier
ME
TO-39
3
-65°C
200°C
143K
264.
2N4032800mW PNP silicon AF medium power amplifier
ME
TO-39
3
-65°C
200°C
143K
265.
2N4033800mW PNP silicon AF medium power amplifier
ME
TO-39
3
-65°C
200°C
143K
266.
2N4036Complementary silicon AF medium power amplifier
ME
TO-39
3
-65°C
200°C
147K
267.
2N40371W PNP complementary silicon transistor
ME
TO-39
3
-65°C
200°C
203K
268.
2N4058360mW PNP silicon general purpose AF transistor
ME
TO-92B
3
-55°C
150°C
137K
269.
2N4059360mW PNP silicon general purpose AF transistor
ME
TO-92B
3
-55°C
150°C
137K
270.
2N4060360mW PNP silicon general purpose AF transistor
ME
TO-92B
3
-55°C
150°C
137K
271.
2N4061360mW PNP silicon general purpose AF transistor
ME
TO-92B
3
-55°C
150°C
137K
272.
2N4062360mW PNP silicon general purpose AF transistor
ME
TO-92B
3
-55°C
150°C
137K
273.
2N4123200mW NPN silicon planar epixial transistor
ME
TO-92A
3
-
-
85K
274.
2N4124200mW NPN silicon planar epixial transistor
ME
TO-92A
3
-
-
85K
275.
2N4867N-Channel silicon junction field-effect transistor
IFET
TO-72
4
-
-
63K
276.
2N4867AN-Channel silicon junction field-effect transistor
IFET
TO-72
4
-
-
63K
277.
2N4868N-Channel silicon junction field-effect transistor
IFET
TO-72
4
-
-
63K
278.
2N4868AN-Channel silicon junction field-effect transistor
IFET
TO-72
4
-
-
63K
279.
2N4869N-Channel silicon junction field-effect transistor
IFET
TO-72
4
-
-
63K
280.
2N4869AN-Channel silicon junction field-effect transistor
IFET
TO-72
4
-
-
63K
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