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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
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Why GetDatasheet.com ?
We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 76 Displaying: 21 - 40| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 21. | MLD2N06CL | Voltage clamped current limiting mosfet | MOT | DPAK | 4 | -50°C | 150°C | 194K | | 22. | MMDF2N02ER2 | TMOS dual N-channel field effect transistor | MOT | SO-8 | 8 | -55°C | 150°C | 276K | | 23. | MMDF2N05ZR2 | TMOS dual N-channel | MOT | SO-8 | 8 | -55°C | 150°C | 191K | | 24. | MMDF2N06V1 | TMOS SO-8 for surface mount | MOT | SO-8 | 8 | -55°C | 150°C | 113K | | 25. | MMDF2N06VLR2 | TMOS SO-8 for surface mount | MOT | SO-8 | 8 | -55°C | 150°C | 114K | | 26. | MMFT2N02EL | Medium power field effect transistor | MOT | TO-261AA | 4 | -65°C | 150°C | 250K | | 27. | MTB52N06V | TMOS V power field effect transistor D2PAK for surface mount | MOT | DPAK | 4 | -55°C | 175°C | 198K | | 28. | MTB52N06V | TMOS V power field effect transistor D2PAK for surface mount | MOT | DPAK | 4 | -55°C | 175°C | 198K | | 29. | MTB52N06VL | TMOS V power field effect transistor D2PAK for surface mount | MOT | DPAK | 4 | -55°C | 175°C | 200K | | 30. | MTP52N06V | TMOS V power field effect transistor | MOT | - | 4 | -55°C | 175°C | 162K | | 31. | MTP52N06VL | TMOS V power field effect transistor | MOT | - | 4 | -55°C | 175°C | 166K | | 32. | RF1S42N03LSM | 42A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFET | INTRS | - | - | - | - | 112K | | 33. | RF1S42N03LSM | 42A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFET | INTRS | - | - | - | - | 112K | | 34. | RFD12N06RLESM | 12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs | INTRS | - | - | - | - | 49K | | 35. | RFP12N06RLE | 12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs | INTRS | - | - | - | - | 49K | | 36. | RFP2N08 | 2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs | INTRS | - | - | - | - | 46K | | 37. | RFP2N08L | 2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs | INTRS | - | - | - | - | 35K | | 38. | RFP42N03L | 42A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFET | INTRS | - | - | - | - | 112K | | 39. | RFW2N06RLE | 2A, 60V, 0.160 Ohm, Logic Level, N-Channel Power MOSFET | INTRS | - | - | - | - | 41K | | 40. | YG802N09 | Schottky barrier diode | CALLM | - | 3 | -40°C | 125°C | 75K |
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