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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 61. | 2N2955 | PNP transistor for power switching circuits, series and shunt regulators | UTC | TO-3 | 3 | -65°C | 200°C | 42K |
| 62. | CJD2955 | PNP Complementary silicon power transistor | CENTR | DPAK | 4 | -65°C | 150°C | 542K |
| 63. | DT2955 | 60V; P-channel enchancement mode field effect transistor | DIODS | SOT-223 | 4 | -65°C | 150°C | 74K |
| 64. | HJ2955 | Emitter to base voltage:5V 10A PNP epitaxial planar transistor for gemeral purpose of amplifier and switching applications | HSMC | TO-252 | 3 | - | - | 37K |
| 65. | HMJE2955T | Emitter to base voltage:5V; 10A PNP epitaxial planar transistor for general purpose of amplifier and switching applications | HSMC | TO-220 | 3 | - | - | 38K |
| 66. | KSE2955T | PNP Silicon Transistor | FAIR | - | - | - | - | 38K |
| 67. | KSH2955 | PNP Epitaxial Silicon Transistor | FAIR | - | - | - | - | 49K |
| 68. | KSH2955 | PNP Epitaxial Silicon Transistor | FAIR | - | - | - | - | 49K |
| 69. | MJ2955 | Complementary silicon power transistor | BOCA | TO-3 | 2 | -65°C | 200°C | 174K |
| 70. | MJ2955 | Silicon power transistor. General purpose switching and amplifier applications. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 7Vdc, Ic = 15Adc, Ib = 7Adc. | USHA | TO-204AA | 3 | -65°C | 200°C | 48K |
| 71. | MJ2955 | PNP High power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc Ic = 15Adc, PD = 115W. | USHA | TO-3 | 3 | -65°C | 200°C | 48K |
| 72. | MJ2955 | PNP. Planar silicon transistor. Audio power amplifier DC to DC converter. | WINGS | TO-3 | 3 | - | - | 64K |
| 73. | MJ2955A | 60V Complementary silicon power transistor | BOCA | TO-3 | 2 | -65°C | 200°C | 200K |
| 74. | MJE2955T | PNP, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc Ic = 10Adc, PD = 75W. | USHA | TO-220 | 3 | -65°C | 150°C | 48K |
| 75. | MJE2955T | PNP planar silicon transistor. Audio power amplifier, DC to DC converter. Vcbo=-60V, Vceo=-60V, Vebo=-6V | WINGS | TO-220 | 3 | - | - | 47K |
| 76. | MSU2955C16 | 16 MHZ 16 KB internal memory MCU, on-line down-loadable | MOSEL | - | - | 0°C | 70°C | 71K |
| 77. | MSU2955C25 | 25 MHZ 16 KB internal memory MCU, on-line down-loadable | MOSEL | - | - | 0°C | 70°C | 71K |
| 78. | MSU2955C40 | 40 MHZ 16 KB internal memory MCU, on-line down-loadable | MOSEL | - | - | 0°C | 70°C | 71K |
| 79. | NTE2955 | MOSFET. N-channel, enhancement mode high speed switch. | NTE | - | 3 | -55°C | 150°C | 21K |
| 80. | TIP2955 | PNP silicon power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 7Vdc, Ic = 15Adc, PD = 90W. | USHA | TO-218 | 3 | -65°C | 150°C | 47K |
| 81. | TIP2955 | PNP planar silicon transistor. Audio power amplifier. DC to DC converter. Collector-base voltage -60V. Collector-emitter voltage -60V. Emitter-base voltage -6V | WINGS | - | 3 | - | - | 52K |
