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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 261. | 1N6294A | 91 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode | FAGOR | DO-201AE | 2 | -65°C | 175°C | 89K |
| 262. | 1N6294C | 91 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode | FAGOR | DO-201AE | 2 | -65°C | 175°C | 89K |
| 263. | 1N6294CA | 91 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode | FAGOR | DO-201AE | 2 | -65°C | 175°C | 89K |
| 264. | 5962H3829435BNA | Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish solder. | UTMC | FlatPack | 28 | -55°C | 125°C | 100K |
| 265. | 5962H3829435BNA | Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish solder. | UTMC | FlatPack | 28 | -55°C | 125°C | 100K |
| 266. | 5962H3829435BNC | Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish gold. | UTMC | FlatPack | 28 | -55°C | 125°C | 100K |
| 267. | 5962H3829435BNX | Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish optional. | UTMC | FlatPack | 28 | -55°C | 125°C | 100K |
| 268. | 5962H3829435BXA | Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish solder. | UTMC | DIP | 28 | -55°C | 125°C | 100K |
| 269. | 5962H3829435BXC | Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish gold. | UTMC | DIP | 28 | -55°C | 125°C | 100K |
| 270. | 5962H3829435BXX | Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish optional. | UTMC | DIP | 28 | -55°C | 125°C | 100K |
| 271. | 5962H3829435SXA | Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class V. Lead finish solder. | UTMC | DIP | 28 | -55°C | 125°C | 100K |
| 272. | 5962H3829435SXC | Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class V. Lead finish gold. | UTMC | DIP | 28 | -55°C | 125°C | 100K |
| 273. | F4294-09 | MCP assembly with center hole for reflection MS. For reflection mass spectrometer | HAMAM | - | - | - | - | 67K |
| 274. | LM2940-5.0MD8 | 1A Low Dropout Regulator | NSC | Unpackaged Die | - | -40°C | 125°C | 504K |
| 275. | LM2940-5.0MW8 | 1A Low Dropout Regulator | NSC | Wafer | - | -40°C | 125°C | 504K |
| 276. | NTE2945 | MOSFET. N-channel, enhancement mode high speed switch. | NTE | TO220 | 3 | -55°C | 150°C | 26K |
| 277. | NTE2946 | MOSFET. N-channel, enhancement mode high speed switch. | NTE | TO220 | 3 | -55°C | 150°C | 25K |
| 278. | NTE5294A | 50 watt zener diode, +-5% tolerance. Nominal zener voltage Vz = 180.0V. Zener test current Izt = 68mA. | NTE | - | 2 | -65°C | 175°C | 31K |
| 279. | NTE5294AK | 50 watt zener diode, +-5% tolerance. Nominal zener voltage Vz = 180.0V. Zener test current Izt = 68mA. | NTE | - | 2 | -65°C | 175°C | 31K |
| 280. | R2949 | Spectral responce: 185 to 900nm; 1250Vdc; anode current: 0.1mA; photomultiplier tube | HAMAM | - | 11 | -80°C | 50°C | 51K |
