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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 481. | 28LV64PM-6 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns. | TURBO | PDIP | 28 | -55°C | 125°C | 42K |
| 482. | 28LV64SC-3 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. | TURBO | SOIC | 28 | 0°C | 70°C | 42K |
| 483. | 28LV64SC-4 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. | TURBO | SOIC | 28 | 0°C | 70°C | 42K |
| 484. | 28LV64SC-5 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns. | TURBO | SOIC | 28 | 0°C | 70°C | 42K |
| 485. | 28LV64SC-6 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns. | TURBO | SOIC | 28 | 0°C | 70°C | 42K |
| 486. | 28LV64SI-3 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. | TURBO | SOIC | 28 | -40°C | 85°C | 42K |
| 487. | 28LV64SI-4 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. | TURBO | SOIC | 28 | -40°C | 85°C | 42K |
| 488. | 28LV64SI-5 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns. | TURBO | SOIC | 28 | -40°C | 85°C | 42K |
| 489. | 28LV64SI-6 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns. | TURBO | SOIC | 28 | -40°C | 85°C | 42K |
| 490. | 28LV64SM-3 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. | TURBO | SOIC | 28 | -55°C | 125°C | 42K |
| 491. | 28LV64SM-4 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. | TURBO | SOIC | 28 | -55°C | 125°C | 42K |
| 492. | 28LV64SM-5 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns. | TURBO | SOIC | 28 | -55°C | 125°C | 42K |
| 493. | 28LV64SM-6 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns. | TURBO | SOIC | 28 | -55°C | 125°C | 42K |
| 494. | 28LV64TC-3 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. | TURBO | TSOP | 28 | 0°C | 70°C | 42K |
| 495. | 28LV64TC-4 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. | TURBO | TSOP | 28 | 0°C | 70°C | 42K |
| 496. | 28LV64TC-5 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns. | TURBO | TSOP | 28 | 0°C | 70°C | 42K |
| 497. | 28LV64TC-6 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns. | TURBO | TSOP | 28 | 0°C | 70°C | 42K |
| 498. | 28LV64TI-3 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. | TURBO | TSOP | 28 | -40°C | 85°C | 42K |
| 499. | 28LV64TI-4 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. | TURBO | TSOP | 28 | -40°C | 85°C | 42K |
| 500. | 28LV64TI-5 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns. | TURBO | TSOP | 28 | -40°C | 85°C | 42K |
