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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 421. | 28LV256JM-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. | TURBO | PLCC | 32 | -55°C | 125°C | 41K |
| 422. | 28LV256PC-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | TURBO | PDIP | 28 | 0°C | 70°C | 41K |
| 423. | 28LV256PC-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | TURBO | PDIP | 28 | 0°C | 70°C | 41K |
| 424. | 28LV256PC-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. | TURBO | PDIP | 28 | 0°C | 70°C | 41K |
| 425. | 28LV256PC-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. | TURBO | PDIP | 28 | 0°C | 70°C | 41K |
| 426. | 28LV256PI-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | TURBO | PDIP | 28 | -40°C | 85°C | 41K |
| 427. | 28LV256PI-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | TURBO | PDIP | 28 | -40°C | 85°C | 41K |
| 428. | 28LV256PI-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. | TURBO | PDIP | 28 | -40°C | 85°C | 41K |
| 429. | 28LV256PI-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. | TURBO | PDIP | 28 | -40°C | 85°C | 41K |
| 430. | 28LV256PM-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | TURBO | PDIP | 28 | -55°C | 125°C | 41K |
| 431. | 28LV256PM-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | TURBO | PDIP | 28 | -55°C | 125°C | 41K |
| 432. | 28LV256PM-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. | TURBO | PDIP | 28 | -55°C | 125°C | 41K |
| 433. | 28LV256PM-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. | TURBO | PDIP | 28 | -55°C | 125°C | 41K |
| 434. | 28LV256SC-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | TURBO | SOIC | 28 | 0°C | 70°C | 41K |
| 435. | 28LV256SC-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | TURBO | SOIC | 28 | 0°C | 70°C | 41K |
| 436. | 28LV256SC-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. | TURBO | SOIC | 28 | 0°C | 70°C | 41K |
| 437. | 28LV256SC-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. | TURBO | SOIC | 28 | 0°C | 70°C | 41K |
| 438. | 28LV256SI-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | TURBO | SOIC | 28 | -40°C | 85°C | 41K |
| 439. | 28LV256SI-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | TURBO | SOIC | 28 | -40°C | 85°C | 41K |
| 440. | 28LV256SI-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. | TURBO | SOIC | 28 | -40°C | 85°C | 41K |
