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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 401. | 28LV010RPDB20 | 3.3V 1 Megabit (128K x 8-bit) - EEPROM | MAXWL | DIP | 32 | -55°C | 125°C | 425K |
| 402. | 28LV010RPDE20 | 3.3V 1 Megabit (128K x 8-bit) - EEPROM | MAXWL | DIP | 32 | -55°C | 125°C | 425K |
| 403. | 28LV010RPDE25 | 3.3V 1 Megabit (128K x 8-bit) - EEPROM | MAXWL | DIP | 32 | -55°C | 125°C | 425K |
| 404. | 28LV010RPDI20 | 3.3V 1 Megabit (128K x 8-bit) - EEPROM | MAXWL | DIP | 32 | -55°C | 125°C | 425K |
| 405. | 28LV010RPDI25 | 3.3V 1 Megabit (128K x 8-bit) - EEPROM | MAXWL | DIP | 32 | -55°C | 125°C | 425K |
| 406. | 28LV010RPDS20 | 3.3V 1 Megabit (128K x 8-bit) - EEPROM | MAXWL | DIP | 32 | -55°C | 125°C | 425K |
| 407. | 28LV010RPDS25 | 3.3V 1 Megabit (128K x 8-bit) - EEPROM | MAXWL | DIP | 32 | -55°C | 125°C | 425K |
| 408. | 28LV010RPFI20 | 3.3V 1 Megabit (128K x 8-bit) - EEPROM | MAXWL | Flatpack | 32 | -55°C | 125°C | 425K |
| 409. | 28LV010RPFI25 | 3.3V 1 Megabit (128K x 8-bit) - EEPROM | MAXWL | Flatpack | 32 | -55°C | 125°C | 425K |
| 410. | 28LV256JC-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | TURBO | PLCC | 32 | 0°C | 70°C | 41K |
| 411. | 28LV256JC-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | TURBO | PLCC | 32 | 0°C | 70°C | 41K |
| 412. | 28LV256JC-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. | TURBO | PLCC | 32 | 0°C | 70°C | 41K |
| 413. | 28LV256JC-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. | TURBO | PLCC | 32 | 0°C | 70°C | 41K |
| 414. | 28LV256JI-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | TURBO | PLCC | 32 | -40°C | 85°C | 41K |
| 415. | 28LV256JI-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | TURBO | PLCC | 32 | -40°C | 85°C | 41K |
| 416. | 28LV256JI-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. | TURBO | PLCC | 32 | -40°C | 85°C | 41K |
| 417. | 28LV256JI-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. | TURBO | PLCC | 32 | -40°C | 85°C | 41K |
| 418. | 28LV256JM-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | TURBO | PLCC | 32 | -55°C | 125°C | 41K |
| 419. | 28LV256JM-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | TURBO | PLCC | 32 | -55°C | 125°C | 41K |
| 420. | 28LV256JM-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. | TURBO | PLCC | 32 | -55°C | 125°C | 41K |
