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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 641. | 28LV64PI-6 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns. | TURBO | PDIP | 28 | -40°C | 85°C | 42K |
| 642. | 28LV64PM-3 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. | TURBO | PDIP | 28 | -55°C | 125°C | 42K |
| 643. | 28LV64PM-4 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. | TURBO | PDIP | 28 | -55°C | 125°C | 42K |
| 644. | 28LV64PM-5 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns. | TURBO | PDIP | 28 | -55°C | 125°C | 42K |
| 645. | 28LV64PM-6 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns. | TURBO | PDIP | 28 | -55°C | 125°C | 42K |
| 646. | 28LV64SC-3 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. | TURBO | SOIC | 28 | 0°C | 70°C | 42K |
| 647. | 28LV64SC-4 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. | TURBO | SOIC | 28 | 0°C | 70°C | 42K |
| 648. | 28LV64SC-5 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns. | TURBO | SOIC | 28 | 0°C | 70°C | 42K |
| 649. | 28LV64SC-6 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns. | TURBO | SOIC | 28 | 0°C | 70°C | 42K |
| 650. | 28LV64SI-3 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. | TURBO | SOIC | 28 | -40°C | 85°C | 42K |
| 651. | 28LV64SI-4 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. | TURBO | SOIC | 28 | -40°C | 85°C | 42K |
| 652. | 28LV64SI-5 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns. | TURBO | SOIC | 28 | -40°C | 85°C | 42K |
| 653. | 28LV64SI-6 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns. | TURBO | SOIC | 28 | -40°C | 85°C | 42K |
| 654. | 28LV64SM-3 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. | TURBO | SOIC | 28 | -55°C | 125°C | 42K |
| 655. | 28LV64SM-4 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. | TURBO | SOIC | 28 | -55°C | 125°C | 42K |
| 656. | 28LV64SM-5 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns. | TURBO | SOIC | 28 | -55°C | 125°C | 42K |
| 657. | 28LV64SM-6 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns. | TURBO | SOIC | 28 | -55°C | 125°C | 42K |
| 658. | 28LV64TC-3 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. | TURBO | TSOP | 28 | 0°C | 70°C | 42K |
| 659. | 28LV64TC-4 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. | TURBO | TSOP | 28 | 0°C | 70°C | 42K |
| 660. | 28LV64TC-5 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns. | TURBO | TSOP | 28 | 0°C | 70°C | 42K |
