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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 601. | 28LV256SC-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. | TURBO | SOIC | 28 | 0°C | 70°C | 41K |
| 602. | 28LV256SI-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | TURBO | SOIC | 28 | -40°C | 85°C | 41K |
| 603. | 28LV256SI-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | TURBO | SOIC | 28 | -40°C | 85°C | 41K |
| 604. | 28LV256SI-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. | TURBO | SOIC | 28 | -40°C | 85°C | 41K |
| 605. | 28LV256SI-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. | TURBO | SOIC | 28 | -40°C | 85°C | 41K |
| 606. | 28LV256SM-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | TURBO | SOIC | 28 | -55°C | 125°C | 41K |
| 607. | 28LV256SM-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | TURBO | SOIC | 28 | -55°C | 125°C | 41K |
| 608. | 28LV256SM-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. | TURBO | SOIC | 28 | -55°C | 125°C | 41K |
| 609. | 28LV256SM-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. | TURBO | SOIC | 28 | -55°C | 125°C | 41K |
| 610. | 28LV256TC-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | TURBO | TSOP | 28 | 0°C | 70°C | 41K |
| 611. | 28LV256TC-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | TURBO | TSOP | 28 | 0°C | 70°C | 41K |
| 612. | 28LV256TC-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. | TURBO | TSOP | 28 | 0°C | 70°C | 41K |
| 613. | 28LV256TC-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. | TURBO | TSOP | 28 | 0°C | 70°C | 41K |
| 614. | 28LV256TI-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | TURBO | TSOP | 28 | -40°C | 85°C | 41K |
| 615. | 28LV256TI-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | TURBO | TSOP | 28 | -40°C | 85°C | 41K |
| 616. | 28LV256TI-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. | TURBO | TSOP | 28 | -40°C | 85°C | 41K |
| 617. | 28LV256TI-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. | TURBO | TSOP | 28 | -40°C | 85°C | 41K |
| 618. | 28LV256TM-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | TURBO | TSOP | 28 | -55°C | 125°C | 41K |
| 619. | 28LV256TM-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | TURBO | TSOP | 28 | -55°C | 125°C | 41K |
| 620. | 28LV256TM-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. | TURBO | TSOP | 28 | -55°C | 125°C | 41K |
