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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 581. | 28LV256JI-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. | TURBO | PLCC | 32 | -40°C | 85°C | 41K |
| 582. | 28LV256JM-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | TURBO | PLCC | 32 | -55°C | 125°C | 41K |
| 583. | 28LV256JM-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | TURBO | PLCC | 32 | -55°C | 125°C | 41K |
| 584. | 28LV256JM-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. | TURBO | PLCC | 32 | -55°C | 125°C | 41K |
| 585. | 28LV256JM-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. | TURBO | PLCC | 32 | -55°C | 125°C | 41K |
| 586. | 28LV256PC-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | TURBO | PDIP | 28 | 0°C | 70°C | 41K |
| 587. | 28LV256PC-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | TURBO | PDIP | 28 | 0°C | 70°C | 41K |
| 588. | 28LV256PC-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. | TURBO | PDIP | 28 | 0°C | 70°C | 41K |
| 589. | 28LV256PC-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. | TURBO | PDIP | 28 | 0°C | 70°C | 41K |
| 590. | 28LV256PI-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | TURBO | PDIP | 28 | -40°C | 85°C | 41K |
| 591. | 28LV256PI-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | TURBO | PDIP | 28 | -40°C | 85°C | 41K |
| 592. | 28LV256PI-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. | TURBO | PDIP | 28 | -40°C | 85°C | 41K |
| 593. | 28LV256PI-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. | TURBO | PDIP | 28 | -40°C | 85°C | 41K |
| 594. | 28LV256PM-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | TURBO | PDIP | 28 | -55°C | 125°C | 41K |
| 595. | 28LV256PM-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | TURBO | PDIP | 28 | -55°C | 125°C | 41K |
| 596. | 28LV256PM-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. | TURBO | PDIP | 28 | -55°C | 125°C | 41K |
| 597. | 28LV256PM-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. | TURBO | PDIP | 28 | -55°C | 125°C | 41K |
| 598. | 28LV256SC-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | TURBO | SOIC | 28 | 0°C | 70°C | 41K |
| 599. | 28LV256SC-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | TURBO | SOIC | 28 | 0°C | 70°C | 41K |
| 600. | 28LV256SC-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. | TURBO | SOIC | 28 | 0°C | 70°C | 41K |
