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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 361. | 28LV256PC-3 | Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PDIP | 28 | 0°C | 70°C | 41K |
| 362. | 28LV256PC-3 | Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PDIP | 28 | 0°C | 70°C | 41K |
| 363. | 28LV256PC-4 | Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PDIP | 28 | 0°C | 70°C | 41K |
| 364. | 28LV256PC-5 | Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PDIP | 28 | 0°C | 70°C | 41K |
| 365. | 28LV256PC-6 | Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PDIP | 28 | 0°C | 70°C | 41K |
| 366. | 28LV256PI-3 | Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PDIP | 28 | -40°C | 85°C | 41K |
| 367. | 28LV256PI-4 | Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PDIP | 28 | -40°C | 85°C | 41K |
| 368. | 28LV256PI-5 | Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PDIP | 28 | -40°C | 85°C | 41K |
| 369. | 28LV256PI-6 | Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PDIP | 28 | -40°C | 85°C | 41K |
| 370. | 28LV256PM-3 | Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PDIP | 28 | -55°C | 125°C | 41K |
| 371. | 28LV256PM-4 | Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PDIP | 28 | -55°C | 125°C | 41K |
| 372. | 28LV256PM-5 | Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PDIP | 28 | -55°C | 125°C | 41K |
| 373. | 28LV256PM-6 | Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PDIP | 28 | -55°C | 125°C | 41K |
| 374. | 28LV256SM-3 | Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | SOIC | 28 | -55°C | 125°C | 41K |
| 375. | 28LV256SM-4 | Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | SOIC | 28 | -55°C | 125°C | 41K |
| 376. | 28LV256SM-5 | Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | SOIC | 28 | -55°C | 125°C | 41K |
| 377. | 28LV256SM-6 | Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | SOIC | 28 | -55°C | 125°C | 41K |
| 378. | UT62V5128LC-100LI | Access time: 100 ns, 512 K x 8 Bit low power CMOS SRAM | UTRON | TSOP | 32 | -20°C | 85°C | 171K |
| 379. | UT62V5128LC-100LLI | Access time: 100 ns, 512 K x 8 Bit low power CMOS SRAM | UTRON | TSOP | 32 | -20°C | 85°C | 171K |
| 380. | UT62V5128LC-70LI | Access time: 70 ns, 512 K x 8 Bit low power CMOS SRAM | UTRON | TSOP | 32 | -20°C | 85°C | 171K |
