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Found: 331      Displaying: 261 - 280
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
261.
1N3288A100V, 100A general purpose single diode
PWRX
-
-
-
-
551K
262.
1N3288AR100V, 100A general purpose single diode
PWRX
-
-
-
-
551K
263.
30KW288A288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
MDE
P-600
2
-55°C
175°C
166K
264.
EXO-3-12.288MCMOS crystal oscillator 12.288MHz
KSS
DIP
8
-10°C
70°C
101K
265.
EXO-3-12.288MCrystal oscillator for uPs with programmable output, 12.288MHz
WK
DIP
8
-10°C
70°C
24K
266.
LTC1288CN83V micropower sampling 12-bit A/D converter
LINER
PDIP
8
0°C
70°C
342K
267.
LTC1288CS83V micropower sampling 12-bit A/D converter
LINER
SO
8
0°C
70°C
342K
268.
NTE5288A50 watt zener diode, +-5% tolerance. Nominal zener voltage Vz = 120.0V. Zener test current Izt = 100mA.
NTE
-
2
-65°C
175°C
31K
269.
NTE5288AK50 watt zener diode, +-5% tolerance. Nominal zener voltage Vz = 120.0V. Zener test current Izt = 100mA.
NTE
-
2
-65°C
175°C
31K
270.
V53C3128804V128Mbit SDRAM 3.3V 16Mbit x 8
MOSEL
WBGA
60
0°C
70°C
871K
271.
V54C3128804VALS6128Mbit SDRAM 3.3V
MOSEL
SOC
60
0°C
70°C
694K
272.
V54C3128804VALS7128Mbit SDRAM 3.3V
MOSEL
SOC
60
0°C
70°C
694K
273.
V54C3128804VALS8128Mbit SDRAM 3.3V
MOSEL
SOC
60
0°C
70°C
694K
274.
V54C3128804VB616Mbit x 8 SDRAM, 3.3V, LVTTL, 6ns
MOSEL
WBGA
60
0°C
70°C
871K
275.
V54C3128804VB716Mbit x 8 SDRAM, 3.3V, LVTTL, 7ns
MOSEL
WBGA
60
0°C
70°C
871K
276.
V54C3128804VB816Mbit x 8 SDRAM, 3.3V, LVTTL, 8ns
MOSEL
WBGA
60
0°C
70°C
871K
277.
V58C2128804SXT6High performance 2.5V 128MB DDR SDRAM
MOSEL
TSOP
66
0°C
70°C
948K
278.
V58C2128804SXT7High performance 2.5V 128MB DDR SDRAM
MOSEL
TSOP
66
0°C
70°C
948K
279.
V58C2128804SXT75High performance 2.5V 128MB DDR SDRAM
MOSEL
TSOP
66
0°C
70°C
948K
280.
V58C2128804SXT8High performance 2.5V 128MB DDR SDRAM
MOSEL
TSOP
66
0°C
70°C
948K
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