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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 941. | 2SC2814 | NPN transistor for high-frequency general-purpose amplifier applications | SANYO | CP | 3 | -55°C | 150°C | 144K |
| 942. | 2SC2816 | NPN transistor for high voltage, high speed and high power switching | HIT | - | 3 | -55°C | 150°C | 31K |
| 943. | HM628128DLR-5 | 1 M SRAM (128-kword x 8-bit), 55ns | HIT | TSOP I | 32 | -20°C | 70°C | 124K |
| 944. | HM628128DLR-5SL | 1 M SRAM (128-kword x 8-bit), 55ns | HIT | TSOP I | 32 | -20°C | 70°C | 124K |
| 945. | HM628128DLR-5UL | 1 M SRAM (128-kword x 8-bit), 55ns | HIT | TSOP I | 32 | -20°C | 70°C | 124K |
| 946. | HM628128DLR-7 | 1 M SRAM (128-kword x 8-bit), 70ns | HIT | TSOP I | 32 | -20°C | 70°C | 124K |
| 947. | HM628128DLR-7SL | 1 M SRAM (128-kword x 8-bit), 70ns | HIT | TSOP I | 32 | -20°C | 70°C | 124K |
| 948. | HM628128DLR-7SL | 1 M SRAM (128-kword x 8-bit), 70ns | HIT | TSOP I | 32 | -20°C | 70°C | 124K |
| 949. | HM628128DLR-7UL | 1 M SRAM (128-kword x 8-bit), 70ns | HIT | TSOP I | 32 | -20°C | 70°C | 124K |
| 950. | HM628128DLT-5UL | 1 M SRAM (128-kword x 8-bit), 55ns | HIT | TSOP I | 32 | -20°C | 70°C | 124K |
| 951. | HM628128DLT-7UL | 1 M SRAM (128-kword x 8-bit), 70ns | HIT | TSOP I | 32 | -20°C | 70°C | 124K |
| 952. | REC10-2812DRWL | 10W DC/DC converter with 28V input, +-12/+-416mA output | RECOM | DIL | 6 | -25°C | 70°C | 82K |
| 953. | REC10-2812SRWL | 10W DC/DC converter with 28V input, 12/830mA output | RECOM | DIL | 6 | -25°C | 70°C | 82K |
| 954. | REC10-2815DRWL | 10W DC/DC converter with 28V input, +-15/+-333mA output | RECOM | DIL | 6 | -25°C | 70°C | 82K |
| 955. | REC10-2815SRWL | 10W DC/DC converter with 28V input, 15/670mA output | RECOM | DIL | 6 | -25°C | 70°C | 82K |
| 956. | VTE1281-1 | GaAlAs infrared emitting diode. Irradiance(typ) 3.3 mW/cm2 (distance 36 mm, diameter 6.4 mm). | PERK | T-1.75 | 2 | -40°C | 100°C | 32K |
| 957. | VTE1281-2 | GaAlAs infrared emitting diode. Irradiance(typ) 6.5 mW/cm2 (distance 36 mm, diameter 6.4 mm). | PERK | T-1.75 | 2 | -40°C | 100°C | 32K |
| 958. | VTE1281F | GaAlAs infrared emitting diode. Irradiance(typ) 0.21 mW/cm2 (distance 36 mm, diameter 6.4 mm). | PERK | T-1.75 | 2 | -40°C | 100°C | 24K |
| 959. | VTE1281W-1 | GaAlAs infrared emitting diode. Irradiance(typ) 1.6 mW/cm2 (distance 36 mm, diameter 6.4 mm). | PERK | T-1.75 | 2 | -40°C | 100°C | 32K |
| 960. | VTE1281W-2 | GaAlAs infrared emitting diode. Irradiance(typ) 3.3 mW/cm2 (distance 36 mm, diameter 6.4 mm). | PERK | T-1.75 | 2 | -40°C | 100°C | 32K |
