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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 41. | 1N5258A | 36 V, 3.4 mA, zener diode | LRC | DO | 2 | - | - | 47K |
| 42. | 30KW258A | 258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | MDE | P-600 | 2 | -55°C | 175°C | 166K |
| 43. | AQV258AX | PhotoMOS relay, HE (high-function economy) type [1-channel (form A) type]. I/O isolation : 1.500V AC. Output rating: load voltage 1.500 V, load current 20 mA. Surface-mount terminal, tape and reel packing style, picked from the 1/2/3-pin side. | NAIS | - | 6 | -40°C | 85°C | 56K |
| 44. | AQV258AZ | PhotoMOS relay, HE (high-function economy) type [1-channel (form A) type]. I/O isolation : 1.500V AC. Output rating: load voltage 1.500 V, load current 20 mA. Surface-mount terminal, tape and reel packing style, picked from the 4/5/6-pin side. | NAIS | - | 6 | -40°C | 85°C | 56K |
| 45. | KA258A | Dual operational amplifier | FAIR | DIP | 8 | -25°C | 85°C | 148K |
| 46. | KA258AD | Dual operational amplifier | FAIR | SOP | 8 | -25°C | 85°C | 148K |
| 47. | KSC2258A | NPN Epitaxial Silicon Transistor | FAIR | - | - | - | - | 44K |
| 48. | LH52258AD-20 | CMOS 32K x 8 static RAM | SHARP | DIP | 28 | -65°C | 150°C | 77K |
| 49. | LH52258AD-25 | CMOS 32K x 8 static RAM | SHARP | DIP | 28 | -65°C | 150°C | 77K |
| 50. | LH52258AK-20 | CMOS 32K x 8 static RAM | SHARP | SOJ | 28 | -65°C | 150°C | 77K |
| 51. | LH52258AK-25 | CMOS 32K x 8 static RAM | SHARP | SOJ | 28 | -65°C | 150°C | 77K |
| 52. | MC54F258AJ | Quad 2-input multiplexer with 3-state outputs | MOT | DIP | 16 | -55°C | 125°C | 62K |
| 53. | MC74F258AD | Quad 2-input multiplexer with 3-state outputs | MOT | SOIC | 16 | -55°C | 125°C | 62K |
| 54. | MC74F258AD | Quad 2-input multiplexer with 3-state outputs | MOT | SOIC | 16 | -55°C | 125°C | 62K |
| 55. | MC74F258AN | Quad 2-input multiplexer with 3-state outputs | MOT | PDIP | 16 | -55°C | 125°C | 62K |
| 56. | MGFC39V5258A | 5.2-5.8 GHz band 8W internally matched GaAs FET | MITS | GF-8 | 3 | - | - | 97K |
| 57. | MGFC42V5258A | 5.2-5.8GHz band 16W internally matched GaAs FET | MITS | GF-18 | 3 | - | - | 77K |
| 58. | NTE5258A | 50 watt zener diode, +-5% tolerance. Nominal zener voltage Vz = 16.0V. Zener test current Izt = 780mA. | NTE | - | 2 | -65°C | 175°C | 31K |
| 59. | NTE5258AK | 50 watt zener diode, +-5% tolerance. Nominal zener voltage Vz = 16.0V. Zener test current Izt = 780mA. | NTE | - | 2 | -65°C | 175°C | 31K |
| 60. | SB30-40-258AM | 40V, 30A Dual Schottky common anode Rectifier diode | SAMEL | TO258 | - | - | - | 17K |
| 61. | SB30-45-258AM | 45V, 30A Dual Schottky common anode Rectifier diode | SAMEL | TO258 | - | - | - | 17K |
