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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 441. | 1N5256A | 30 V, 4.2 mA, zener diode | LRC | DO | 2 | - | - | 47K |
| 442. | 28C256APC-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. | TURBO | PDIP | 28 | 0°C | 70°C | 41K |
| 443. | 28C256APC-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. | TURBO | PDIP | 28 | 0°C | 70°C | 41K |
| 444. | 28C256APC-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | TURBO | PDIP | 28 | 0°C | 70°C | 41K |
| 445. | 28C256APC-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | TURBO | PDIP | 28 | 0°C | 70°C | 41K |
| 446. | 28C256API-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. | TURBO | PDIP | 28 | -40°C | 85°C | 41K |
| 447. | 28C256API-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. | TURBO | PDIP | 28 | -40°C | 85°C | 41K |
| 448. | 28C256API-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | TURBO | PDIP | 28 | -40°C | 85°C | 41K |
| 449. | 28C256API-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | TURBO | PDIP | 28 | -40°C | 85°C | 41K |
| 450. | 28C256APM-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. | TURBO | PDIP | 28 | -55°C | 125°C | 41K |
| 451. | 28C256APM-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. | TURBO | PDIP | 28 | -55°C | 125°C | 41K |
| 452. | 28C256APM-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | TURBO | PDIP | 28 | -55°C | 125°C | 41K |
| 453. | BF256A | Transistor polarity N Channel Gfs min 4.5 mA/V Current Idss max 7 mA Current Idss min 3 mA Current Ig 10 mA Application code HFA Power Ptot 300 mW Voltage Vgs off max 7.5 V | FAIR | TO-92r | - | - | - | 120K |
| 454. | BF256A | Transistor polarity N Channel Gfs min 4.5 mA/V Current Idss max 7 mA Current Idss min 3 mA Current Ig 10 mA Application code HFA Power Ptot 300 mW Voltage Vgs off max 7.5 V | FAIR | TO-92r | - | - | - | 120K |
| 455. | HY62256ALJ-I-55 | 32Kx8bit CMOS SRAM, standby current=100uA, 55ns | HEI | SOP | 28 | -40°C | 85°C | 820K |
| 456. | HY62256ALLJ-70 | 32Kx8bit CMOS SRAM, standby current=25uA, 70ns | HEI | SOP | 28 | 0°C | 70°C | 820K |
| 457. | HY62256ALLR1-85 | 32Kx8bit CMOS SRAM, standby current=25uA, 85ns | HEI | TSOP I | 28 | 0°C | 70°C | 820K |
| 458. | HY62256ALR1-85 | 32Kx8bit CMOS SRAM, standby current=100uA, 85ns | HEI | TSOP I | 28 | 0°C | 70°C | 820K |
| 459. | HY62256AP-I-55 | 32Kx8bit CMOS SRAM, standby current=1mA, 55ns | HEI | PDIP | 28 | -40°C | 85°C | 820K |
| 460. | HY62256AP-I-70 | 32Kx8bit CMOS SRAM, standby current=1mA, 70ns | HEI | PDIP | 28 | -40°C | 85°C | 820K |
