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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 161. | ABR2502 | 200 V, 25 A Avalanche bridge rectifier | EIC | BR | 4 | -50°C | 150°C | 44K |
| 162. | AR2502 | 200 V, 25 A Automotive rectifier diode | EIC | - | 2 | -65°C | 175°C | 16K |
| 163. | AR2502L | 200 V, 25 A Automotive rectifier diode | EIC | AR-L | 2 | -65°C | 175°C | 30K |
| 164. | BR2502 | 200 V, 25 A silicon bridge rectifier | EIC | BR | 4 | -40°C | 150°C | 20K |
| 165. | BR2502W | 200 V, 25 A silicon bridge rectifier | EIC | BR | 4 | -40°C | 150°C | 17K |
| 166. | CM2502 | High current silicon bridge rectifier. Max recurrent peak reverse voltage 200V. Max average forward current for resistive load 25A. Non-repetive peak forward surge current at rated load 300A. | PAJIT | CM-25 | 4 | -55°C | 150°C | 65K |
| 167. | CM2502 | High current silicon bridge rectifier. Max recurrent peak reverse voltage 200V. Max average forward current for resistive load 25A. Non-repetive peak forward surge current at rated load 300A. | PAJIT | CM-25W | 4 | -55°C | 150°C | 65K |
| 168. | CP2502 | High current silicon bridge rectifier. Max recurrent peak reverse voltage 200V. Max average forward current for resistive load at Tc=55degC 25A. | PAJIT | CP-25 | 4 | -55°C | 150°C | 68K |
| 169. | CP2502 | High current silicon bridge rectifier. Max recurrent peak reverse voltage 200V. Max average forward current for resistive load at Tc=55degC 25A. | PAJIT | CP-25W | 4 | -55°C | 150°C | 68K |
| 170. | CP2502 | High current silicon bridge rectifier. Max recurrent peak reverse voltage 200V. Max average forward current for resistive load at Tc=55degC 25A. | PAJIT | CP-25W | 4 | -55°C | 150°C | 68K |
| 171. | FBR2502 | 200 V, 25 A, fast recovery bridge rectifier | EIC | BR | 4 | -50°C | 150°C | 20K |
| 172. | GBPC2502 | High current silicon bridge rectifier. Max recurrent peak reverse voltage 200 V. Max average forward current for resistive load at Tc=55degC 25 A. | PAJIT | GBPC | 4 | -50°C | 150°C | 38K |
| 173. | GBPC2502W | High current silicon bridge rectifier. Max recurrent peak reverse voltage 200 V. Max average forward current for resistive load at Tc=55degC 25 A. | PAJIT | GBPC-W | 4 | -50°C | 150°C | 40K |
| 174. | GL2502 | In-line high current silicon bridge rectifier. Max recurrent peak reverse voltage 200 V. Max average forward current for resistive load at Tc=55degC 25 A. | PAJIT | GL | 4 | -50°C | 150°C | 46K |
| 175. | MR2502 | 200 V, 25 A, automotive rectifier diode | EIC | - | 2 | -65°C | 175°C | 18K |
| 176. | MR2502L | 200 V, 25 A, automotive rectifier diode | EIC | MR-L | 2 | -65°C | 175°C | 16K |
| 177. | RBV2502 | 200 V, 25 A, silicon bridge rectifier | EIC | RBV25 | 4 | -40°C | 150°C | 19K |
| 178. | RBV2502D | 200 V, 25 A, silicon bridge rectifier | EIC | RBV25 | 4 | -40°C | 150°C | 19K |
| 179. | TP2502N8 | 20V P-channel enhancement-mode vertical DMOS FET | SUTEX | TO-243AA | 3 | -55°C | 150°C | 455K |
| 180. | TP2502ND | 20V P-channel enhancement-mode vertical DMOS FET | SUTEX | Die | 3 | -55°C | 150°C | 455K |
