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GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.

Found: 294      Displaying: 201 - 220
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
201.
ABR2501100 V, 25 A Avalanche bridge rectifier
EIC
BR
4
-50°C
150°C
44K
202.
AR2501100 V, 25 A Automotive rectifier diode
EIC
-
2
-65°C
175°C
16K
203.
AR2501L100 V, 25 A Automotive rectifier diode
EIC
AR-L
2
-65°C
175°C
30K
204.
BR2501100 V, 25 A silicon bridge rectifier
EIC
BR
4
-40°C
150°C
20K
205.
BR2501W100 V, 25 A silicon bridge rectifier
EIC
BR
4
-40°C
150°C
17K
206.
CM2501High current silicon bridge rectifier. Max recurrent peak reverse voltage 100V. Max average forward current for resistive load 25A. Non-repetive peak forward surge current at rated load 300A.
PAJIT
CM-25
4
-55°C
150°C
65K
207.
CM2501High current silicon bridge rectifier. Max recurrent peak reverse voltage 100V. Max average forward current for resistive load 25A. Non-repetive peak forward surge current at rated load 300A.
PAJIT
CM-25W
4
-55°C
150°C
65K
208.
CP2501High current silicon bridge rectifier. Max recurrent peak reverse voltage 100V. Max average forward current for resistive load at Tc=55degC 25A.
PAJIT
CP-25
4
-55°C
150°C
68K
209.
CP2501High current silicon bridge rectifier. Max recurrent peak reverse voltage 100V. Max average forward current for resistive load at Tc=55degC 25A.
PAJIT
CP-25W
4
-55°C
150°C
68K
210.
FBR2501100 V, 25 A, fast recovery bridge rectifier
EIC
BR
4
-50°C
150°C
20K
211.
GBPC2501WHigh current silicon bridge rectifier. Max recurrent peak reverse voltage 100 V. Max average forward current for resistive load at Tc=55degC 25 A.
PAJIT
GBPC-W
4
-50°C
150°C
40K
212.
GL2501In-line high current silicon bridge rectifier. Max recurrent peak reverse voltage 100 V. Max average forward current for resistive load at Tc=55degC 25 A.
PAJIT
GL
4
-50°C
150°C
46K
213.
MR2501100 V, 25 A, automotive rectifier diode
EIC
-
2
-65°C
175°C
18K
214.
MR2501L100 V, 25 A, automotive rectifier diode
EIC
MR-L
2
-65°C
175°C
16K
215.
RBV2501100 V, 25 A, silicon bridge rectifier
EIC
RBV25
4
-40°C
150°C
19K
216.
RBV2501D100 V, 25 A, silicon bridge rectifier
EIC
RBV25
4
-40°C
150°C
19K
217.
TC54VC2501ECTTRVoltage detector, CMOS output, 2.5V, +/-1%
MCHIP
SOT-23A
5
-40°C
85°C
215K
218.
TC54VN2501ECTTRVoltage detector, Nch open drain, 2.5V, +/-1%
MCHIP
SOT-23A
5
-40°C
85°C
215K
219.
TC54VN2501ECTTRVoltage detector, Nch open drain, 2.5V, +/-1%
MCHIP
SOT-23A
5
-40°C
85°C
215K
220.
TC54VN2501EMBTRVoltage detector, Nch open drain, 2.5V, +/-1%
MCHIP
SOT-89
3
-40°C
85°C
215K
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