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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 2641. | CM2500 | High current silicon bridge rectifier. Max recurrent peak reverse voltage 50V. Max average forward current for resistive load 25A. Non-repetive peak forward surge current at rated load 300A. | PAJIT | CM-25 | 4 | -55°C | 150°C | 65K |
| 2642. | CM2500 | High current silicon bridge rectifier. Max recurrent peak reverse voltage 50V. Max average forward current for resistive load 25A. Non-repetive peak forward surge current at rated load 300A. | PAJIT | CM-25W | 4 | -55°C | 150°C | 65K |
| 2643. | CM2501 | High current silicon bridge rectifier. Max recurrent peak reverse voltage 100V. Max average forward current for resistive load 25A. Non-repetive peak forward surge current at rated load 300A. | PAJIT | CM-25 | 4 | -55°C | 150°C | 65K |
| 2644. | CM2501 | High current silicon bridge rectifier. Max recurrent peak reverse voltage 100V. Max average forward current for resistive load 25A. Non-repetive peak forward surge current at rated load 300A. | PAJIT | CM-25W | 4 | -55°C | 150°C | 65K |
| 2645. | CM2502 | High current silicon bridge rectifier. Max recurrent peak reverse voltage 200V. Max average forward current for resistive load 25A. Non-repetive peak forward surge current at rated load 300A. | PAJIT | CM-25 | 4 | -55°C | 150°C | 65K |
| 2646. | CM2502 | High current silicon bridge rectifier. Max recurrent peak reverse voltage 200V. Max average forward current for resistive load 25A. Non-repetive peak forward surge current at rated load 300A. | PAJIT | CM-25W | 4 | -55°C | 150°C | 65K |
| 2647. | RBV2500D | 50 V, 25 A, silicon bridge rectifier | EIC | RBV25 | 4 | -40°C | 150°C | 19K |
| 2648. | RBV2501D | 100 V, 25 A, silicon bridge rectifier | EIC | RBV25 | 4 | -40°C | 150°C | 19K |
| 2649. | RBV2502D | 200 V, 25 A, silicon bridge rectifier | EIC | RBV25 | 4 | -40°C | 150°C | 19K |
| 2650. | RBV2504D | 400 V, 25 A, silicon bridge rectifier | EIC | RBV25 | 4 | -40°C | 150°C | 19K |
| 2651. | RBV2506 | 600 V, 25 A, silicon bridge rectifier | EIC | RBV25 | 4 | -40°C | 150°C | 19K |
| 2652. | RBV2506D | 600 V, 25 A, silicon bridge rectifier | EIC | RBV25 | 4 | -40°C | 150°C | 19K |
| 2653. | RBV2508 | 800 V, 25 A, silicon bridge rectifier | EIC | RBV25 | 4 | -40°C | 150°C | 19K |
| 2654. | RBV2508D | 800 V, 25 A, silicon bridge rectifier | EIC | RBV25 | 4 | -40°C | 150°C | 19K |
| 2655. | SB250S | 50 V, 2.0 A, schottky barrier rectifier diode | EIC | - | 2 | -65°C | 150°C | 28K |
| 2656. | STE250N06 | Length/Height 12.2 mm Width 25.4 mm Depth 38 mm Power dissipation 450 W Transistor polarity N Channel Centres fixing 31.6 mm Current Id cont. 250 A Current Idm pulse 750 A Voltage isolation 2.5 kV | STM | - | - | - | - | 330K |
| 2657. | TAN250A | 250 W, 50 V, 960-1215 MHz common base transistor | GHZ | 55AW | 3 | - | - | 201K |
| 2658. | TC54VC2501ECTTR | Voltage detector, CMOS output, 2.5V, +/-1% | MCHIP | SOT-23A | 5 | -40°C | 85°C | 215K |
| 2659. | TC54VN2501ECTTR | Voltage detector, Nch open drain, 2.5V, +/-1% | MCHIP | SOT-23A | 5 | -40°C | 85°C | 215K |
| 2660. | TC54VN2501ECTTR | Voltage detector, Nch open drain, 2.5V, +/-1% | MCHIP | SOT-23A | 5 | -40°C | 85°C | 215K |
