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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
2181. | BS250F | P-channel enhancement mode vertical DMOS FET | ZETEX | SOT | 3 | -55°C | 150°C | 80K |
2182. | BS250F | P-channel enhancement mode vertical DMOS FET | ZETEX | SOT | 3 | -55°C | 150°C | 80K |
2183. | BS250P | P-channel enhancement mode vertical DMOS FET | ZETEX | - | 3 | -55°C | 150°C | 48K |
2184. | BS250P | P-channel enhancement mode vertical DMOS FET | ZETEX | - | 3 | -55°C | 150°C | 48K |
2185. | IRFP250N | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.075 Ohm, ID = 30A | IRF | TO-247AC | 3 | -55°C | 175°C | 122K |
2186. | P4FMAJ250A | GPP transient voltage suppressor. Breakdown voltage 237V to 263V. 400W peak power, 1.0W steady stat. For bidirectional use C or CA suffixs (ex. P4FMAJ6.8C, P4FMAJ400CA) | RECTR | DO-214AC | 2 | -65°C | 175°C | 1M |
2187. | P4KE250A | GPP transient voltage suppressor. Breakdown voltage 237V to 263V. 400W peak power, 1.0W steady state. For bidirectional use CA suffix. | RECTR | - | 2 | -65°C | 175°C | 1M |
2188. | P6FMBJ250A | GPP transient voltage suppressor. Breakdown voltage 237V to 263V. 600W peak power, 1.0W steady stat. For bidirectional use CA suffix | RECTR | DO-214AA | 2 | -55°C | 150°C | 1M |
2189. | P6KE250A | GPP transient voltage suppressor. Breakdown voltage 237V to 263V. 600W peak power, 1.0W steady state. For bidirectional use CA suffix. | RECTR | DO-15 | 2 | -65°C | 175°C | 1M |
2190. | R2500F | High voltage fast recovery rectifier. Max recurrent peak reverse voltage 2500V, max RMS voltage 1750V, max DC blocking voltage 2500V. Max average forward rectified current 200mA at Ta=50degC. | RECTR | DO-15 | 2 | -65°C | 175°C | 20K |
2191. | RS2501M | Single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 50V, max RMS bridge input voltage 35V, max DC blocking voltage 50V. Max average forward rectified output current 25.0A at Tc=100degC with heatsink. | RECTR | RS-25M | 4 | -55°C | 150°C | 30K |
2192. | RS2502M | Single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 100V, max RMS bridge input voltage 70V, max DC blocking voltage 100V. Max average forward rectified output current 25.0A at Tc=100degC with heatsink. | RECTR | RS-25M | 4 | -55°C | 150°C | 30K |
2193. | RS2503M | Single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 200V, max RMS bridge input voltage 140V, max DC blocking voltage 200V. Max average forward rectified output current 25.0A at Tc=100degC with heatsink. | RECTR | RS-25M | 4 | -55°C | 150°C | 30K |
2194. | RS2504M | Single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 400V, max RMS bridge input voltage 280V, max DC blocking voltage 400V. Max average forward rectified output current 25.0A at Tc=100degC with heatsink. | RECTR | RS-25M | 4 | -55°C | 150°C | 30K |
2195. | RS2505M | Single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 600V, max RMS bridge input voltage 420V, max DC blocking voltage 600V. Max average forward rectified output current 25.0A at Tc=100degC with heatsink. | RECTR | RS-25M | 4 | -55°C | 150°C | 30K |
2196. | RS2506M | Single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 800V, max RMS bridge input voltage 560V, max DC blocking voltage 800V. Max average forward rectified output current 25.0A at Tc=100degC with heatsink. | RECTR | RS-25M | 4 | -55°C | 150°C | 30K |
2197. | RS2507M | Single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 1000V, max RMS bridge input voltage 700V, max DC blocking voltage 1000V. Max average forward rectified output current 25.0A at Tc=100degC with heatsink. | RECTR | RS-25M | 4 | -55°C | 150°C | 30K |
2198. | ZMM5250B | 5% zener diode. Power dissipation 500 mW. Zener voltage Vz=20V at Izt=6.2mA. | RECTR | mini-MELF | - | -65°C | 200°C | 23K |
2199. | ZXCL250E5 | 2.5 V, Ultra small micropower low dropout regulator | ZETEX | SOT | 5 | -40°C | 85°C | 374K |
2200. | ZXCL250E5 | 2.5 V, Ultra small micropower low dropout regulator | ZETEX | SOT | 5 | -40°C | 85°C | 374K |