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Found: 726      Displaying: 561 - 580
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
561.
1N5242B12 V, 20 mA zener diode
FORMO
-
2
-
-
94K
562.
1N5242B12 V, 20 mA, zener diode
LRC
DO
2
-
-
47K
563.
1N5242C12 V, 20 mA, zener diode
LRC
DO
2
-
-
47K
564.
1N5242D12 V, 20 mA, zener diode
LRC
DO
2
-
-
47K
565.
1N5242D12 V, 20 mA, zener diode
LRC
DO
2
-
-
47K
566.
BD242A70 V, PNP silicon power transistor
TRSYS
TO-220
3
-65°C
150°C
476K
567.
BD242B90 V, PNP silicon power transistor
TRSYS
TO-220
3
-65°C
150°C
476K
568.
BD242C115 V, PNP silicon power transistor
TRSYS
TO-220
3
-65°C
150°C
476K
569.
CHV2242a-99F/00Q-band VCO based on Ku-band oscillator and Q-band multiplier
UMS
Chip
21
-40°C
100°C
812K
570.
LM2427TTriple 80 MHz CRT driver
NSC
MKT-TA12A
12
-20°C
90°C
117K
571.
MMBZ5242BSurface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 12.0 V. Test current 20.0 mA.
CNEL
SOT-23
3
-
-
21K
572.
MMBZ5242BLT112 V, 20 mA, 225 mW, semiconductor
LRC
SOT-23
3
-
-
168K
573.
PA2423G2.4 GHz bluetooth class 1 power amplifier IC.
SIGE
Golg bump bare die
12
-40°C
85°C
388K
574.
PA2423L2.4 GHz bluetooth class 1 power amplifier IC.
SIGE
LPCC
6
-40°C
85°C
367K
575.
PA2423MB2.4 GHz bluetooth class 1 power amplifier IC.
SIGE
MSOP
8
-40°C
85°C
370K
576.
PS4124252400V, 2500A general purpose single diode
PWRX
-
-
-
-
91K
577.
R6002425XXYA2400V, 250A general purpose single diode
PWRX
-
-
-
-
704K
578.
R6012425XXYA2400V, 250A general purpose single diode
PWRX
-
-
-
-
704K
579.
RA2024202400V, 2000A general purpose single diode
PWRX
-
-
-
-
458K
580.
RA2024252400V, 2500A general purpose single diode
PWRX
-
-
-
-
457K
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