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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1661. | ARF241S25 | 2500 V, 260 A, 3 kA fast recovery diode | POSEI | - | 2 | -30°C | 150°C | 43K |
| 1662. | MDE-10D241K | 240V; max peak current:3500A; metal oxide varistor. Standard D series 10mm disc | MDE | - | 2 | - | - | 75K |
| 1663. | MDE-14D241K | 240V; max peak current:6000A; metal oxide varistor. Standard D series 14mm disc | MDE | - | 2 | - | - | 74K |
| 1664. | MDE-20D241K | 240V; max peak current:10000A; metal oxide varistor. Standard D series 20mm disc | MDE | - | 2 | - | - | 77K |
| 1665. | MDE-25D241K | 240V; max peak current:18000A; metal oxide varistor. Standard D series 25mm disc | MDE | - | 2 | - | - | 87K |
| 1666. | MDE-25S241K | 240V; max peak current:20000A; metal oxide varistor. Standard S series 25mm disc | MDE | - | 2 | - | - | 87K |
| 1667. | MDE-32D241K | 240V; max peak current:25000A; metal oxide varistor. High energy series 32mm single disc | MDE | - | 2 | - | - | 75K |
| 1668. | MDE-34S241K | 240V; max peak current:40000A; Tmax=11; metal oxide varistor. High energy series 34mm single square | MDE | - | 2 | - | - | 88K |
| 1669. | MDE-40D241K | 240V; max peak current:40000A; metal oxide varistor. High energy series 40mm single disc | MDE | - | 2 | - | - | 82K |
| 1670. | NTE2412 | Silicon NPN transistor. General purpose, high voltage amp (compl to NTE2413). | NTE | SOT-23 | 3 | 0°C | 150°C | 19K |
| 1671. | NTE2412 | Silicon NPN transistor. General purpose, high voltage amp (compl to NTE2413). | NTE | SOT-23 | 3 | 0°C | 150°C | 19K |
| 1672. | NTE2413 | Silicon PNP transistor. General purpose, high voltage amp (compl to NTE2412). | NTE | SOT-23 | 3 | 0°C | 150°C | 20K |
| 1673. | NTE2414 | Silicon complementary NPN transistor. Digital w/2 built-in bias 10k resistors (surface mount). | NTE | SOT-23 | 3 | 0°C | 150°C | 24K |
| 1674. | NTE2415 | Silicon complementary PNP transistor. Digital w/2 built-in bias 10k resistors (surface mount). | NTE | SOT-23 | 3 | 0°C | 150°C | 24K |
| 1675. | NTE2416 | Silicon complementary NPN transistor. Digital w/2 built-in bias 22k resistors (surface mount). | NTE | SOT-23 | 3 | 0°C | 150°C | 24K |
| 1676. | NTE2417 | Silicon complementary PNP transistor. Digital w/2 built-in bias 22k resistors (surface mount). | NTE | SOT-23 | 3 | 0°C | 150°C | 24K |
| 1677. | NTE2418 | Silicon complementary NPN transistor. Digital w/2 built-in bias 47k resistors (surface mount). | NTE | SOT-23 | 3 | 0°C | 150°C | 24K |
| 1678. | NTE2419 | Silicon complementary PNP transistor. Digital w/2 built-in bias 47k resistors (surface mount). | NTE | SOT-23 | 3 | 0°C | 150°C | 24K |
| 1679. | NTE5241A | 50 watt zener diode, +-5% tolerance. Nominal zener voltage Vz = 4.3V. Zener test current Izt = 2900mA. | NTE | - | 2 | -65°C | 175°C | 31K |
| 1680. | NTE5241AK | 50 watt zener diode, +-5% tolerance. Nominal zener voltage Vz = 4.3V. Zener test current Izt = 2900mA. | NTE | - | 2 | -65°C | 175°C | 31K |
| 1681. | SMBZ-5241B | 11 V 500 mW, silicon planar zener diode | SURGE | SOT-23 | 3 | - | - | 75K |
