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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
281. | 1N5238B | 8.7V; 500mW epitaxial zener diode | DIODS | DO-35 | 2 | -65°C | 200°C | 34K |
282. | HMBZ5238B | 8.7V 20A zener diode | HSMC | SOT23 | 3 | - | - | 86K |
283. | HMM5238B | 8.7V 20A zener diode | HSMC | - | - | - | - | 39K |
284. | MMBZ5238B | 8.7V; 350mW surface mount zener diode. General purpose; Ideally suited for automated assembly processes | DIODS | SOT-23 | 3 | -65°C | 150°C | 66K |
285. | MMBZ5238B | Pd=410mW, Vz=8.7V zener diode | MCC | SOT-23 | - | - | - | 617K |
286. | MMBZ5238BS | 9.1V; 200mW surface mount zener diode. Ideally suited for automated assembly processes | DIODS | SOT-363 | 6 | -65°C | 150°C | 63K |
287. | MMBZ5238BTS | 8.7V; 200mW triple surface mount zener diode array. Ideally suited for automated assembly | DIODS | SOT-363 | 6 | -65°C | 150°C | 62K |
288. | MMSZ5238B | 8.7V; 500mW surface mount zener diode. General purpose; Ideally suited for automated assembly processes | DIODS | SOD-123 | 2 | -65°C | 150°C | 61K |
289. | MMSZ5238BS | 8.7V; 200mW surface mount zener diode. General purpose. Ideally suited for automated assembly processes | DIODS | SOT-323 | 3 | -65°C | 150°C | 61K |
290. | MMUN2238LT1 | 50 V, bias resistor transistor | LRC | SOT-23 | 3 | -65°C | 150°C | 146K |
291. | MMUN2238LT1 | 50 V, bias resistor transistor | LRC | SOT-23 | 3 | -65°C | 150°C | 146K |
292. | NTE2380 | N-Ch, complementary silicon gate MOSFETs enhancement mode, high speed switch. | NTE | TO220 | 3 | -55°C | 150°C | 29K |
293. | NTE2381 | P-Ch, complementary silicon gate MOSFETs enhancement mode, high speed switch. | NTE | TO220 | 3 | -65°C | 150°C | 29K |
294. | NTE2382 | MOSFET, N-Channel enhancement mode, high speed switch (compl to NTE2383). | NTE | TO220 | 3 | -55°C | 150°C | 26K |
295. | NTE2384 | MOSFET, N-Channel enhancement mode, high speed switch. | NTE | - | 2 | 0°C | 150°C | 24K |
296. | NTE2385 | MOSFET, N-Ch, enhancement mode, high speed switch. | NTE | - | 3 | -55°C | 150°C | 28K |
297. | NTE2386 | MOSFET, N-Channel enhancement mode, high speed switch. | NTE | - | 2 | -55°C | 150°C | 27K |
298. | NTE2387 | MOSFET, N-Channel enhancement mode, high speed switch. | NTE | - | 3 | -55°C | 150°C | 23K |
299. | NTE2388 | MOSFET. N-Channel enhancement mode, high speed switch. | NTE | TO220 | 3 | -55°C | 150°C | 26K |
300. | NTE2389 | MOSFET. N-Channel enhancement mode, high speed switch. | NTE | - | 3 | 0°C | 175°C | 23K |
301. | ZMM5238B | 8.7V; 500mW power dissipation surface mount zener diode | DIODS | MiniMELF | - | -65°C | 175°C | 80K |