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GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.

Found: 371      Displaying: 281 - 300
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
281.
1N5238B8.7V; 500mW epitaxial zener diode
DIODS
DO-35
2
-65°C
200°C
34K
282.
HMBZ5238B8.7V 20A zener diode
HSMC
SOT23
3
-
-
86K
283.
HMM5238B8.7V 20A zener diode
HSMC
-
-
-
-
39K
284.
MMBZ5238B8.7V; 350mW surface mount zener diode. General purpose; Ideally suited for automated assembly processes
DIODS
SOT-23
3
-65°C
150°C
66K
285.
MMBZ5238BPd=410mW, Vz=8.7V zener diode
MCC
SOT-23
-
-
-
617K
286.
MMBZ5238BS9.1V; 200mW surface mount zener diode. Ideally suited for automated assembly processes
DIODS
SOT-363
6
-65°C
150°C
63K
287.
MMBZ5238BTS8.7V; 200mW triple surface mount zener diode array. Ideally suited for automated assembly
DIODS
SOT-363
6
-65°C
150°C
62K
288.
MMSZ5238B8.7V; 500mW surface mount zener diode. General purpose; Ideally suited for automated assembly processes
DIODS
SOD-123
2
-65°C
150°C
61K
289.
MMSZ5238BS8.7V; 200mW surface mount zener diode. General purpose. Ideally suited for automated assembly processes
DIODS
SOT-323
3
-65°C
150°C
61K
290.
MMUN2238LT150 V, bias resistor transistor
LRC
SOT-23
3
-65°C
150°C
146K
291.
MMUN2238LT150 V, bias resistor transistor
LRC
SOT-23
3
-65°C
150°C
146K
292.
NTE2380N-Ch, complementary silicon gate MOSFETs enhancement mode, high speed switch.
NTE
TO220
3
-55°C
150°C
29K
293.
NTE2381P-Ch, complementary silicon gate MOSFETs enhancement mode, high speed switch.
NTE
TO220
3
-65°C
150°C
29K
294.
NTE2382MOSFET, N-Channel enhancement mode, high speed switch (compl to NTE2383).
NTE
TO220
3
-55°C
150°C
26K
295.
NTE2384MOSFET, N-Channel enhancement mode, high speed switch.
NTE
-
2
0°C
150°C
24K
296.
NTE2385MOSFET, N-Ch, enhancement mode, high speed switch.
NTE
-
3
-55°C
150°C
28K
297.
NTE2386MOSFET, N-Channel enhancement mode, high speed switch.
NTE
-
2
-55°C
150°C
27K
298.
NTE2387MOSFET, N-Channel enhancement mode, high speed switch.
NTE
-
3
-55°C
150°C
23K
299.
NTE2388MOSFET. N-Channel enhancement mode, high speed switch.
NTE
TO220
3
-55°C
150°C
26K
300.
NTE2389MOSFET. N-Channel enhancement mode, high speed switch.
NTE
-
3
0°C
175°C
23K
301.
ZMM5238B8.7V; 500mW power dissipation surface mount zener diode
DIODS
MiniMELF
-
-65°C
175°C
80K
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