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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 21. | 5962R-0323501QUA | 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si). | UTMC | Ceramic flatpack | 36 | -55°C | 125°C | 109K |
| 22. | 5962R-0323501QUC | 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si). | UTMC | Ceramic flatpack | 36 | -55°C | 125°C | 109K |
| 23. | 5962R-0323501QUC | 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si). | UTMC | Ceramic flatpack | 36 | -55°C | 125°C | 109K |
| 24. | 5962R-0323501QUX | 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si). | UTMC | Ceramic flatpack | 36 | -55°C | 125°C | 109K |
| 25. | 5962R-0323501VUA | 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si). | UTMC | Ceramic flatpack | 36 | -55°C | 125°C | 109K |
| 26. | 5962R-0323501VUC | 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si). | UTMC | Ceramic flatpack | 36 | -55°C | 125°C | 109K |
| 27. | 5962R-0323501VUX | 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish factory option. Total dose 100K rad(Si). | UTMC | Ceramic flatpack | 36 | -55°C | 125°C | 109K |
| 28. | 5962R-0323501VUX | 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish factory option. Total dose 100K rad(Si). | UTMC | Ceramic flatpack | 36 | -55°C | 125°C | 109K |
| 29. | 5962R-0323502QUA | 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si). | UTMC | Ceramic flatpack | 36 | -40°C | 125°C | 109K |
| 30. | 5962R-0323502QUC | 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si). | UTMC | Ceramic flatpack | 36 | -40°C | 125°C | 109K |
| 31. | 5962R-0323502VUA | 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si). | UTMC | Ceramic flatpack | 36 | -40°C | 125°C | 109K |
| 32. | 5962R-0323502VUC | 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si). | UTMC | Ceramic flatpack | 36 | -40°C | 125°C | 109K |
| 33. | HLMP-2350 | LED LIGHT BARS RED | FAIR | - | - | - | - | 764K |
| 34. | LMX2350TMX | 2.5 GHz/550 MHz PLLatinum Fractional N RF / Integer N IF Dual Low Power Frequency Synthesizer | NSC | TSSOP | 24 | -40°C | 85°C | 405K |
| 35. | MAAM02350 | 0.2-0.3 GHz, Wide band GaAs MMIC amplifier | MACOM | - | - | -55°C | 125°C | 181K |
| 36. | MAAM02350-A2 | 0.2 0.3 GHz wide band GaAs MMIC amplifier | MACOM | CR | 8 | -55°C | 100°C | 150K |
| 37. | MAAM02350-A2G | 0.2 0.3 GHz wide band GaAs MMIC amplifier | MACOM | CR | 8 | -55°C | 100°C | 150K |
| 38. | NTE2350 | Silicon darlington PNP transistor. High current, general purpose. | NTE | TO3 | 2 | -55°C | 200°C | 26K |
| 39. | T700023504BY | 200V, 350A phase control single thyristor | PWRX | - | - | - | - | 722K |
| 40. | T700123504BY | 1200V, 350A phase control single thyristor | PWRX | - | - | - | - | 722K |
| 41. | T700223504BY | 2200V, 350A phase control single thyristor | PWRX | - | - | - | - | 722K |
