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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
361. | CR2353AA | TO-220 series Sibod, glass passivated junction, bi-directional. Pins 1-2&3-2, pins 1-3: Vr = 200.0V, Vbo = 270.0V,max. Ir = 5.0uA. Vt = 10.0V,typ. Ibo = 800.0mA. | LIFUS | TO-220 | 3 | -55°C | 175°C | 79K |
362. | CR2353AB | TO-220 series Sibod, glass passivated junction, bi-directional. Pins 1-2&3-2, pins 1-3: Vr = 200.0V, Vbo = 270.0V,max. Ir = 5.0uA. Vt = 10.0V,typ. Ibo = 800.0mA. | LIFUS | TO-220 | 3 | -55°C | 175°C | 79K |
363. | CR2353AC | TO-220 series Sibod, glass passivated junction, bi-directional. Pins 1-2&3-2, pins 1-3: Vr = 200.0V, Vbo = 270.0V,max. Ir = 5.0uA. Vt = 10.0V,typ. Ibo = 800.0mA. | LIFUS | TO-220 | 3 | -55°C | 175°C | 79K |
364. | NTE2350 | Silicon darlington PNP transistor. High current, general purpose. | NTE | TO3 | 2 | -55°C | 200°C | 26K |
365. | NTE2351 | Silicon complementary NPN transistor. Darlington power amp, switch. | NTE | - | 3 | 0°C | 150°C | 24K |
366. | NTE2352 | Silicon complementary PNP transistor. Darlington power amp, switch. | NTE | - | 3 | 0°C | 150°C | 24K |
367. | NTE2353 | Silicon NPN transistor. TV horizontal deflection output w/damper diode. | NTE | - | 3 | 0°C | 150°C | 21K |
368. | NTE2353 | Silicon NPN transistor. TV horizontal deflection output w/damper diode. | NTE | - | 3 | 0°C | 150°C | 21K |
369. | NTE2354 | Silicon NPN transistor. High voltage horizontal output for high definition CRT. | NTE | - | 3 | 0°C | 150°C | 20K |
370. | NTE2355 | Silicon complementary NPN transistor. Digital w/2 built-in 10k bias resistors. | NTE | - | 3 | 0°C | 150°C | 24K |
371. | NTE2356 | Silicon complementary PNP transistor. Digital w/2 built-in 10k bias resistors. | NTE | - | 3 | 0°C | 150°C | 24K |
372. | NTE2357 | Silicon complementary NPN transistor. Digital w/2 built-in 22k bias resistors. | NTE | TO92 | 3 | 0°C | 150°C | 24K |
373. | NTE2358 | Silicon complementary PNP transistor. Digital w/2 built-in 22k bias resistors. | NTE | TO92 | 3 | 0°C | 150°C | 24K |
374. | NTE2358 | Silicon complementary PNP transistor. Digital w/2 built-in 22k bias resistors. | NTE | TO92 | 3 | 0°C | 150°C | 24K |
375. | NTE2359 | Silicon complementary NPN transistor. Digital w/2 built-in 47k bias resistors. | NTE | TO92 | 3 | 0°C | 150°C | 24K |
376. | P2353AA | 200 V, balanced three-chip sidactor device | TECOR | TO-220 | 3 | -40°C | 150°C | 1M |
377. | P2353AB | 200 V, balanced three-chip sidactor device | TECOR | TO-220 | 3 | -40°C | 150°C | 1M |
378. | P2353ACMC | 200 V, balanced three-chip microcapacitance sidactor device | TECOR | TO-220 | 3 | -40°C | 150°C | 1M |
379. | PMBZ5235B | 6.8 V, 20 mA, voltage regulator diode | PHLPS | SOT | 3 | - | - | 59K |
380. | SMBZ-5235B | 6.8 V 500 mW, silicon planar zener diode | SURGE | SOT-23 | 3 | - | - | 75K |