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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 81. | APT20M22LVFR | 200V, 100A power MOS V transistor | ADPOW | TO-264 | 3 | -55°C | 150°C | 66K |
| 82. | APT20M22LVR | 200V, 100A power MOS V transistor | ADPOW | TO-264 | 3 | -55°C | 150°C | 64K |
| 83. | ATF22LV10C-15SI | High performance EE PLD, 3V to 5.5V | ATMEL | plastic SOIC | 24 | -40°C | 85°C | 240K |
| 84. | ATF22LV10C-15XI | High performance EE PLD, 3V to 5.5V | ATMEL | plastic TSSOP | 24 | -40°C | 85°C | 240K |
| 85. | H22L1 | 6V, 50mA ISO-logic inverter schmitt trigger interrupter switch | ISOCM | - | 4 | -55°C | 100°C | 88K |
| 86. | H22L2 | 6V, 50mA ISO-logic inverter schmitt trigger interrupter switch | ISOCM | - | 4 | -55°C | 100°C | 88K |
| 87. | MAX822LUS-T | Microprocessor voltage monitor with pin-selectable power-on reset timeout delay (1ms,max, 20ms,min or 100ms,min). Reset threshold(nom) 4.63V. Active-high reset output. | MAXIM | SOT143 | 4 | -40°C | 85°C | 77K |
| 88. | PEEL22LV10AZJ-25 | 35ns CMOS programmable electrically erasable logic device | ICT | PLCC | 24 | 0°C | 70°C | 137K |
| 89. | PEEL22LV10AZJ-25 | CMOS programmable electrically erasable logic device, 25ns | ICT | PLCC | 28 | 0°C | 70°C | 135K |
| 90. | PEEL22LV10AZJI-35 | 35ns CMOS programmable electrically erasable logic device | ICT | PLCC | 24 | -40°C | 85°C | 137K |
| 91. | PEEL22LV10AZP-25 | 25ns CMOS programmable electrically erasable logic device | ICT | PDIP | 24 | 0°C | 70°C | 137K |
| 92. | PEEL22LV10AZPI-35 | 25ns CMOS programmable electrically erasable logic device | ICT | PDIP | 24 | -40°C | 85°C | 137K |
| 93. | PEEL22LV10AZS-25 | 35ns CMOS programmable electrically erasable logic device | ICT | SOIC | 24 | 0°C | 70°C | 137K |
| 94. | PEEL22LV10AZSI-35 | 35ns CMOS programmable electrically erasable logic device | ICT | SOIC | 24 | -40°C | 85°C | 137K |
| 95. | PEEL22LV10AZT-25 | CMOS programmable electrically erasable logic device, 25ns | ICT | TSSOP | 24 | 0°C | 70°C | 135K |
| 96. | PEEL22LV10AZTI-25 | 25ns CMOS programmable electrically erasable logic device | ICT | TSSOP | 24 | 0°C | 70°C | 137K |
| 97. | PEEL22LV10AZTI-35 | 35ns CMOS programmable electrically erasable logic device | ICT | TSSOP | 24 | -40°C | 85°C | 137K |
| 98. | VN2222LL | N-Channel enhancement-mode MOS transistor | CALOG | - | 3 | -55°C | 150°C | 24K |
| 99. | VN2222LM | N-Channel enhancement-mode MOS transistor | CALOG | TO | 3 | -55°C | 150°C | 24K |
| 100. | VTE3322LA | GaAs infrared emitting diode. Irradiance(typ) 1.3 mW/cm2 (distance 10.16 mm, diameter 2.1 mm). | PERK | T-1 | 2 | -40°C | 100°C | 22K |
