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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
1881. | 1N5224B | 500mW 5% zener diode. Zener voltage Vz = 2.8V @ Izt = 20mA. | RECTR | DO-35 | 2 | -65°C | 175°C | 21K |
1882. | CMBZ5224B | 5% surface mount zener diode. Zener voltage Vz = 2.8V at Iz = 20mA. | RECTR | SOT-23 | 3 | -55°C | 125°C | 21K |
1883. | COM5224A | 200V high efficiency, center-tap rectifier | OMNI | TO-254AA | 3 | -55°C | 125°C | 31K |
1884. | F2246 | 2 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 6 | -65°C | 150°C | 33K |
1885. | F2247 | 4 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 6 | -65°C | 150°C | 33K |
1886. | F2248 | 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 6 | -65°C | 150°C | 35K |
1887. | MLX90224AL | Dual hall-effect latch | MELEX | VA | 4 | -40°C | 150°C | 174K |
1888. | MLX90224BL | Dual hall-effect latch | MELEX | VA | 4 | -40°C | 150°C | 174K |
1889. | MLX90224CL | Dual hall-effect latch | MELEX | VA | 4 | -40°C | 150°C | 174K |
1890. | OM5224DA | 24Amp high efficiency, center-tap rectifier | OMNI | TO-254AA | 7 | -55°C | 150°C | 34K |
1891. | OM5224RA | 24Amp high efficiency, center-tap rectifier | OMNI | TO-254AA | 7 | -55°C | 150°C | 34K |
1892. | OM5224SA | 24Amp high efficiency, center-tap rectifier | OMNI | TO-254AA | 7 | -55°C | 150°C | 34K |
1893. | OM5224SM | 20Amp high efficiency, center-tap rectifier | OMNI | Surface mount | 2 | -55°C | 150°C | 8M |
1894. | OP224SCC-B1 | High reliability GaAlAs infrared emitting diode | OPTEK | - | - | -55°C | 125°C | 223K |
1895. | OP224SCC-B2 | High reliability GaAlAs infrared emitting diode | OPTEK | - | - | -55°C | 125°C | 223K |
1896. | OP224SCC-B3 | High reliability GaAlAs infrared emitting diode | OPTEK | - | - | -55°C | 125°C | 223K |
1897. | OP224SCC-C1 | High reliability GaAlAs infrared emitting diode | OPTEK | - | - | -55°C | 125°C | 223K |
1898. | OP224SCC-C2 | High reliability GaAlAs infrared emitting diode | OPTEK | - | - | -55°C | 125°C | 223K |
1899. | OP224SCC-C3 | High reliability GaAlAs infrared emitting diode | OPTEK | - | - | -55°C | 125°C | 223K |
1900. | ZMM5224B | 5% zener diode. Power dissipation 500 mW. Zener voltage Vz=2.8V at Izt=20mA. | RECTR | mini-MELF | - | -65°C | 200°C | 23K |