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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
881. | 20KW216A | 216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor | MDE | P-600 | 2 | -55°C | 175°C | 166K |
882. | 30KW216A | 216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | MDE | P-600 | 2 | -55°C | 175°C | 166K |
883. | AQV216A | PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 600V, load current 50 mA. Tube packing style. | NAIS | DIP | 6 | -40°C | 85°C | 53K |
884. | AQV216A | PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 600V, load current 50 mA. Tube packing style. | NAIS | DIP | 6 | -40°C | 85°C | 53K |
885. | AQV216SZ | PhotoMOS relay, GU (general use) type [1-channel (form A ) type]. Output rating: load voltage 600 V, load current 40 mA. Tape and reel packing style, picked from the 4/5/6-pin side. | NAIS | SO | 6 | -40°C | 85°C | 41K |
886. | AQW216A | PhotoMOS relay, GU (general use), 2-channel (form A) type. AC/DC type. Output rating: load voltage 600 V, load current 40 mA. Surface-mount terminal. Tube packing style. | NAIS | DIP | 8 | -40°C | 85°C | 46K |
887. | AQW216AX | PhotoMOS relay, GU (general use), 2-channel (form A) type. AC/DC type. Output rating: load voltage 600 V, load current 40 mA. Surface-mount terminal. Tape and reel packing style. | NAIS | DIP | 8 | -40°C | 85°C | 46K |
888. | AQW216AZ | PhotoMOS relay, GU (general use), 2-channel (form A) type. AC/DC type. Output rating: load voltage 60 V, load current 40 mA. Surface-mount terminal. Tape and reel packing style. | NAIS | DIP | 8 | -40°C | 85°C | 46K |
889. | IC61LV3216-15K | 15ns; 3.3V; 32K x 16 low-voltage CMOS static RAM | ICSI | SOJ | 44 | 0°C | 70°C | 99K |
890. | IC61LV3216-20KI | 20ns; 3.3V; 32K x 16 low-voltage CMOS static RAM | ICSI | SOJ | 44 | -40°C | 85°C | 99K |
891. | IC61LV3216-20T | 20ns; 3.3V; 32K x 16 low-voltage CMOS static RAM | ICSI | TSOP | 44 | 0°C | 70°C | 99K |
892. | IC61LV3216-20TI | 20ns; 3.3V; 32K x 16 low-voltage CMOS static RAM | ICSI | TSOP | 44 | -40°C | 85°C | 99K |
893. | K9F1216U0A-PCB0 | 32M x 16 bit NAND flash memory, 2.7 - 3.6V | SMSNG | TSOP I | 48 | 0°C | 70°C | 807K |
894. | K9F1216U0A-YCB0 | 32M x 16 bit NAND flash memory, 2.7 - 3.6V | SMSNG | TSOP I | 48 | 0°C | 70°C | 807K |
895. | K9F1216U0A-YIB0 | 32M x 16 bit NAND flash memory, 2.7 - 3.6V | SMSNG | TSOP I | 48 | -40°C | 85°C | 807K |
896. | NTE5216A | Zener diode, 10 watt, +-5% tolerance. Nominal zener voltage Vz = 75V. Zener test current Izt = 33mA. | NTE | DO4 | 2 | -65°C | 175°C | 30K |
897. | uPD78F4216AGC-8EU | 16-bit single-chip microcontroller, Internal ROM 128Kbytes, Internal RAM 8192bytes | NEC | LQFP | 100 | -40°C | 85°C | 349K |
898. | uPD78F4216AGF-3BA | 16-bit single-chip microcontroller, Internal ROM 128Kbytes, Internal RAM 8192bytes | NEC | QFP | 100 | -40°C | 85°C | 349K |
899. | uPD78F4216AYGF-3BA | 16-bit single-chip microcontroller, Internal ROM 128Kbytes, Internal RAM 8192bytes | NEC | QFP | 100 | -40°C | 85°C | 349K |
900. | VP216ACGHP1S | 0.3-7.0V; dual 90MHz 6-bit analog to digital converter. For satellite decoders | MITEL | PLCC | 44 | 0°C | 70°C | 143K |