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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 281. | 2SA2004 | Silicon PNP epitaxial planar type power transistor | PANAS | - | - | - | - | 34K |
| 282. | 2SD2014 | Transistor For General Purpose | SNKEN | - | - | - | - | 26K |
| 283. | 2SD2064 | Silicon NPN triple diffusion planar type power transistor | PANAS | - | - | - | - | 51K |
| 284. | 2SD2074 | Silicon NPN epitaxial planer type small signal transistor | PANAS | - | - | - | - | 44K |
| 285. | 2SK2044 | N-channel silicon MOSFET, ultrahigh-speed switching application | SANYO | 2078B | 3 | - | - | 100K |
| 286. | 2SK2054 | High-speed switching N channel MOS FET | NEC | MP-2 | - | - | - | 58K |
| 287. | 2SK2074 | N-channel junction silicon FET, high-frequency, low-noise amp application | SANYO | 2034 | 3 | - | - | 79K |
| 288. | DS2064-200 | 8K x 8 Static RAM | DALAS | DIP | 28 | -40°C | 85°C | 73K |
| 289. | DS2064S-200 | 8K x 8 Static RAM | DALAS | SOIC | 28 | -40°C | 85°C | 73K |
| 290. | ISD33120-4P | 120 seconds (4 kHz sampling rate) single chip voice record/playback device | ISD | PDIP | 28 | 0°C | 70°C | 1M |
| 291. | ISD33120-4X | 120 seconds (4 kHz sampling rate) single chip voice record/playback device | ISD | Die | - | 0°C | 50°C | 1M |
| 292. | KTA2014 | PNP transistor for general purpose and switching applications | KEC | USM | 3 | -55°C | 150°C | 279K |
| 293. | NEL2004F02-24 | 2GHz microwave power amplification(4W) | NEC | F02 | - | - | - | 89K |
| 294. | PEB2084H | Quadruple transceiver for S/T interface | SMNS | P-MQFP-44-2 | 44 | 0°C | 70°C | 1M |
| 295. | SFH320-4 | Silicon NPN phototransistor | SMNS | P-LCC-2 | 2 | -55°C | 100°C | 188K |
| 296. | SGM2014M | GaAs N-channel Dual Gate MES FET | SONY | - | - | - | - | 107K |
| 297. | SSM2024 | Quad current controlled amplifier | SSMTM | DIP-16 | 16 | -10°C | 50°C | 310K |
| 298. | SSM2044 | 4-pole voltage controlled filter | SSMTM | DIP-16 | 16 | 0°C | 70°C | 299K |
| 299. | STR2024 | Switching Regulator IC | SNKEN | - | - | - | - | 40K |
| 300. | TB62004FW | 8ch DMOS transistor array with gate | TOS | SOL20-P-300-1.27 | 20 | -40°C | 85°C | 297K |
